Ultralow leakage characteristics of ultrathin gate oxides (∼3 nm) prepared by anodization followed by high-temperature annealing

IEEE Transactions on Electron Devices

Volumn 49, Issue 1, 2002, Pages 179-181

  Ting, Chieh Chih ^a   Shih, Yen Hao ^a   Hwu, Jenn Gwo ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Anodic oxide (ANO); Rapid thermal oxide (RTO)

Indexed keywords

ANODES; ANODIC OXIDATION; CATHODES; ELECTROLYTES; ELLIPSOMETRY; LEAKAGE CURRENTS; RAPID THERMAL ANNEALING; REFRACTIVE INDEX; SEMICONDUCTING BORON; SILICON WAFERS; SUBSTRATES; THIN FILMS;

ANODIC OXIDE; HIGH ELECTRICAL STRESS; HIGH TEMPERATURE ANNEALING; POST-OXIDATION ANNEALING;

MOS CAPACITORS;

EID: 0036257359     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.974766     Document Type: Article

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