An on-chip temperature sensor by utilizing a MOS tunneling diode

IEEE Electron Device Letters

Volumn 22, Issue 6, 2001, Pages 299-301

  Shih, Yen Hao ^b   Hwu, Jenn Gwo ^a,b  

^a IEEE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Metal oxide semiconductor (MOS); Temperature sensor; Tunneling diode

Indexed keywords

TEMPERATURE SENSORS;

CORRELATION METHODS; ELECTRON TUNNELING; MONITORING; SENSORS; SUBSTRATES;

MOS DEVICES;

EID: 0035363536     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.924848     Document Type: Article

References (10)

1. Thermoelectric characterization of Si thin films in silicon-on-insulator wafer
2. Comparison of diodes and resistors for measuring chip temperature during thermal characterization of electronic packages using thermal test chips
3. A comprehensive analytical model for metal-insulator-semiconductor (MIS) devices
4. Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors
5. Electrical properties of silicon containing arsenic and boron