NH3-annealed atomic-layer-deposited silicon nitride as a high-k gate dielectric with high reliability

Applied Physics Letters

Volumn 80, Issue 7, 2002, Pages 1252-1254

  Nakajima, Anri ^a   Khosru, Quazi D M ^a   Yoshimoto, Takashi ^a   Kidera, Toshirou ^a   Yokoyama, Shin ^a  

^a HIROSHIMA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; EQUIVALENT OXIDE THICKNESS; FUTURE TECHNOLOGIES; HIGH RELIABILITY; HIGH-K GATE DIELECTRICS; INTEGRATED DEVICE; LOW DIELECTRIC; LOW TEMPERATURES; OPERATING VOLTAGE; SI-N BONDS; SOFT BREAKDOWN;

DIELECTRIC MATERIALS; SILICON NITRIDE;

GATE DIELECTRICS;

EID: 79956055203     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1447314     Document Type: Article

References (24)

1. S. M. Sze, in Physics of Semiconductor Devices (Wiley, New York, 1981).
2. T. Ito, H. Arakawa, T. Nozaki, and H. Ishikawa, J. Electrochem. Soc. 127, 2248 (1980). jes JESOAN 0013-4651
3. T. Ito, T. Nakamura, and H. Ishikawa, IEEE Trans. Electron Devices ED-29, 498 (1982). etd IETDAI 0018-9383
4. Z. J. Ma, J. C. Chen, Z. H. Liu, J. T. Krick, Y. C. Cheng, C. Hu, and P. K. Ko, IEEE Electron Device Lett. 15, 109 (1994). edl EDLEDZ 0741-3106
5. M. Bhat, J. Kim, J. Yan, G. W. Yoon, L. K. Han, and D. L. Kwong, IEEE Electron Device Lett. 15, 421 (1994). edl EDLEDZ 0741-3106
6. M. Takayanagi-Takagi, H. Yoshimura, and Y. Toyoshima, Tech. Dig.-Int. Electron Devices Meet. 1997, 235 (1997). tcd TDIMD5 0163-1918
7. Y. Saito, K. Sekine, M. Hirayama, and T. Ohmi, Ext. Abst. Conf. Solid State Devices Mater., Hiroshima, 1998 (Business Center for Academic Societies Japan, Tokyo, 1998), p. 24.
8. H. Sato, A. Izumi, and H. Matsumura, Appl. Phys. Lett. 77, 2752 (2000). apl APPLAB 0003-6951
9. H.-H. Tseng, P. G. Y. Tsui, P. J. Tobin, J. Mogab, M. Khare, X. W. Wang, T. P. Ma, R. Hegde, C. Hobbs, J. Veteran, M. Hartig, G. Kenig, V. Wang, R. Blumenthal, R. Cotton, V. Kaushik, T. Tamagawa, B. L. Halpern, G. J. Cui, and J. J. Schmitt, Tech. Dig.-Int. Electron Devices Meet. 1997, 647 (1997). tcd TDIMD5 0163-1918
10. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998). etd IETDAI 0018-9383
11. H. Goto, K. Shibahara, and S. Yokoyama, Appl. Phys. Lett. 68, 3257 (1996). apl APPLAB 0003-6951
12. W. Hansch, A. Nakajima, and S. Yokoyama, Appl. Phys. Lett. 75, 1535 (1999). apl APPLAB 0003-6951
13. A. Nakajima, T. Yoshimoto, T. Kidera, K. Obata, S. Yokoyama, H. Sunami, and M. Hirose, Appl. Phys. Lett. 77, 2855 (2000). apl APPLAB 0003-6951
14. A. Nakajima, T. Yoshimoto, T. Kidera, K. Obata, S. Yokoyama, H. Sunami, and M. Hirose, J. Vac. Sci. Technol. B 19, 1138 (2001). jvb JVTBD9 0734-211X
15. A. Nakajima, T. Yoshimoto, T. Kidera, and S. Yokoyama, Appl. Phys. Lett. 79, 665 (2001). apl APPLAB 0003-6951
16. Y. Hayafuji and K. Kajiwara, J. Electrochem. Soc. 129, 2102 (1982). jes JESOAN 0013-4651
17. M. Fukuda, W. Mizubayashi, A. Kohno, S. Miyazaki, and M. Hirose, Jpn. J. Appl. Phys., Part 2 37, L1534 (1998). jjc JAPLD8 0021-4922
18. W. Mizubayashi, Y. Yoshida, S. Miyazaki, and M. Hirose, Symp. VLSI Technol. Dig. Tech. Pap., Kyoto (2001), p. 95.
19. S. H. Lee, B. J. Cho, J. C. Kim, and S. H. Choi, Tech. Dig.-Int. Electron Devices Meet. 1994, 605 (1994). tcd TDIMD5 0163-1918
20. M. Hirose, Mater. Sci. Eng., B 41, 35 (1996). msb MSBTEK 0921-5107
21. L. K. Han, M. Bhat, D. Wristers, J. Fulford, and D. L. Kwong, Tech. Dig.-Int. Electron Devices Meet. 1994, 617 (1994). tcd TDIMD5 0163-1918
22. K. F. Schuegraf and C. Hu, IEEE Trans. Electron Devices 41, 761 (1994). etd IETDAI 0018-9383
23. Y. Hokari, IEEE Trans. Electron Devices 35, 1299 (1988). etd IETDAI 0018-9383
24. D. Wristers, L. K. Han, T. Chen, H. H. Wang, D. L. Kwong, M. Allen, and J. Fulford, Appl. Phys. Lett. 68, 2094 (1996). apl APPLAB 0003-6951