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Journal of Applied Physics

Volumn 91, Issue 8, 2002, Pages 5423-5428

Enhanced thermally induced stress effect on an ultrathin gate oxide

(3) Su, Jiann Liang a Hong, Chao Chi a Hwu, Jenn Gwo a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EFFECTIVE CHARGE; ELECTRICAL CHARACTERISTIC; FLAT-BAND VOLTAGE; METAL-OXIDE-SEMICONDUCTOR DIODE; RADIATION HARDNESS; SATURATION CURRENT; SUBSTRATE INJECTION; THERMALLY INDUCED STRESS; THICKNESS DISTRIBUTIONS; ULTRA THIN GATE OXIDE; ULTRA-THIN;

MOS DEVICES; QUARTZ; RAPID THERMAL PROCESSING; SEMICONDUCTOR DIODES; STRESS CONCENTRATION; THERMAL GRADIENTS; THERMAL STRESS;

SILICON WAFERS;

EID: 0037091888 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1452763 Document Type: Article

Times cited : (8)

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