Thin-gate oxides prepared by pure water anodization followed by rapid thermal densification

IEEE Electron Device Letters

Volumn 17, Issue 12, 1996, Pages 575-577

  Jeog, Ming Jer ^a   Hwu, Jenn Gwo ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b IEEE

Author keywords

[No Author keywords available]

Indexed keywords

ANODIC OXIDATION; DENSIFICATION; ELECTRIC BREAKDOWN; ELECTRIC CHARGE; FILM PREPARATION; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; LEAKAGE CURRENTS; OXIDES; THIN FILMS; WATER;

ANODIZATION; RAPID THERMAL DENSIFICATION; THIN GATE OXIDES; TIME DEPENDENT DIELECTRIC BREAKDOWN; TIME ZERO DIELECTRIC BREAKDOWN;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0030398247     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.545775     Document Type: Article

References (8)

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