Resonant tunneling in disordered materials such as SiO2/Si/SiO2

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 617-620

  Lake, R ^a   Brar, B ^a   Wilk, G D ^b   Seabaugh, A ^a   Klimeck, G ^a  

^a RAYTHEON COMPANY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

RESONANT TUNNELING; SILICA; SILICON;

BULK MOBILITY; DISORDERED MATERIALS; EFFECTIVE MASS; ESAKI DIODE; INTERBAND; PEAK-TO-VALLEY RATIOS; VALLEY CURRENT;

RESONANT TUNNELING DIODES;

EID: 84970962588     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711753     Document Type: Conference Paper

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