Physics and applications of Si/SiGe/Si resonant interband tunneling diodes

Thin Solid Films

Volumn 380, Issue 1-2, 2000, Pages 151-153

  Duschl, R ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; TUNNEL DIODES;

ESAKI DIODE; INTERBAND TUNNELING;

SEMICONDUCTING FILMS;

EID: 0034505994     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01491-7     Document Type: Article

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