Si resonant interband tunnel diodes grown by low-temperature molecular-beam epitaxy

Applied Physics Letters

Volumn 75, Issue 9, 1999, Pages 1308-1310

  Thompson, Phillip E ^a   Hobart, Karl D ^a   Twigg, Mark E ^a   Jernigan, Glenn G ^a   Dillon, Thomas E ^b   Rommel, Sean L ^b   Berger, Paul R ^b   Simons, David S ^c   Chi, Peter H ^c   Lake, Roger ^d   Seabaugh, Alan C ^d  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DELAWARE   (United States)

^c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

^d RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); RESONANT INTERBAND TUNNEL DIODES (RITD);

TUNNEL DIODES;

EID: 0032621145     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124677     Document Type: Article

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