Fabrication of resonance tunnel diode by γ-Al2O 3/Si multiple heterostructures

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2602-2605

  Shahjahan, Mohammad ^a   Koji, Yoshiaki ^a   Sawada, Kazuaki ^a   Ishida, Makoto ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

Epitaxial growth of al2o3; MBE; Negative differential resistance (NDR); P V current ratio; Resonance tunneling diode (RTD)

Indexed keywords

ALUMINA; ATOMIC FORCE MICROSCOPY; DIODES; ELECTRIC RESISTANCE; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON;

EPITAXIAL GROWTH OF Γ-AL2O3; NEGATIVE DIFFERENTIAL RESISTANCE (NDR); P/V CURRENT RATIO; RESONANCE TUNNELING DIODE (RTD);

RESONANT TUNNELING;

EID: 0038447347     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2602     Document Type: Article

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