Si-based interband tunneling devices for high-speed logic and low power memory applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 1035-1037

  Rommel, Sean L ^a   Dillon, Thomas E ^a   Berger, Paul R ^a   Lake, Roger ^a   Thompson, Phillip E ^a   Hobart, Karl D ^a   Seabaugh, Alan C ^a   Simons, David S ^a  

^a UNIVERSITY OF DELAWARE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR SUPERLATTICES; TRANSISTOR TRANSISTOR LOGIC CIRCUITS;

DIGITALLY GRADED SUPERLATTICES (DG-SL); RESONANT INTERBAND TUNNEL DIODES (RITD); TUNNEL DIODE/TRANSISTOR LOGIC (TDTL) CIRCUITS;

TUNNEL DIODES;

EID: 0032266796     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)