CaF2/CdF2 double-barrier resonant tunneling diode with high room-temperature peak-to-valley ratio

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 7, 2000, Pages

  Watanabe, Masahiro ^a   Funayama, Toshiyuki ^a   Teraji, Taishi ^a   Sakamaki, Naoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCIUM COMPOUNDS; CURRENT DENSITY; HIGH TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CADMIUM FLUORIDE; CALCIUM FLUORIDE; DOUBLE BARRIER RESONANT TUNNELING DIODE; NEGATIVE DIFFERENTIAL RESISTANCE; PEAK TO VALLEY RATIO;

TUNNEL DIODES;

EID: 0033633382     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l716     Document Type: Article

References (14)