SCOPUS 정보 검색 플랫폼

Volumn 39, Issue 10 A, 2000, Pages

Epitaxial growth and electrical characteristics of CaF2/Si/CaF2 resonant tunneling diode structures grown on Si(111) 1°-off substrate

(3) Watanabe, Masahiro a Iketani, Yoshifumi a Asada, Masahiro a

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; HEAT TREATMENT; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS; VOLTAGE MEASUREMENT;

NEGATIVE DIFFERENTIAL RESISTANCE; PARTIALLY IONIZED BEAM; PEAK TO VALLEY CURRENT RATIO; RESONANT TUNNELING DIODE; ULTRAHIGH VACUUM CHAMBER;

TUNNEL DIODES;

EID: 0034290944 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.l964 Document Type: Article

Times cited : (66)

References (12)

1
- 0033555003
- T. Sumiya, K. Honda, T. Miura and S. Tanaka: J. Appl. Phys. 85 (1999) 941.
- (1999) J. Appl. Phys. , vol.85 , pp. 941
- Sumiya, T.¹ Honda, K.² Miura, T.³ Tanaka, S.⁴

2
- 0028421886
- C.-C. Cho, H.-Yu Liu, J. A. Keenan and K. H. Park: Jpn. J. Appl. Phys. 33 (1994) L530.
- (1994) Jpn. J. Appl. Phys. , vol.33
- Cho, C.-C.¹ Liu, H.-Yu.² Keenan, J.A.³ Park, K.H.⁴

3
- 0000085154
- M. Watanabe, T. Suemasu, S. Muratake and M. Asada: Appl. Phys. Lett. 62 (1993) 300.
- (1993) Appl. Phys. Lett. , vol.62 , pp. 300
- Watanabe, M.¹ Suemasu, T.² Muratake, S.³ Asada, M.⁴

4
- 0028256842
- T. Suemasu, M. Watanabe, J. Suzuki, Y. Kohno, M. Asada and N. Suzuki: Jpn. J. Appl. Phys. 33 (1994) 57.
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 57
- Suemasu, T.¹ Watanabe, M.² Suzuki, J.³ Kohno, Y.⁴ Asada, M.⁵ Suzuki, N.⁶

5
- 0029534558
- T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe and M. Asada: IEEE Trans. Electron Devices 42 (1995) 2203.
- (1995) IEEE Trans. Electron Devices , vol.42 , pp. 2203
- Suemasu, T.¹ Kohno, Y.² Saitoh, W.³ Watanabe, M.⁴ Asada, M.⁵

6
- 0033176816
- M. Tsutsui, M. Watanabe and M. Asada: Jpn. J. Appl. Phys. 38 (1999) L920.
- (1999) Jpn. J. Appl. Phys. , vol.38
- Tsutsui, M.¹ Watanabe, M.² Asada, M.³

7
- 0001430554
- A. Izumi, N. Matsubara, Y. Kushida, K. Tsutsui and N. S. Sokolov: Jpn. J. Appl. Phys. 36 (1997) 1849.
- (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 1849
- Izumi, A.¹ Matsubara, N.² Kushida, Y.³ Tsutsui, K.⁴ Sokolov, N.S.⁵

8
- 0033075585
- M. Watanabe, Y. Aoki, W. Saitoh and M. Tsuganezawa: Jpn. J. Appl. Phys. 38 (1999) L116.
- (1999) Jpn. J. Appl. Phys. , vol.38
- Watanabe, M.¹ Aoki, Y.² Saitoh, W.³ Tsuganezawa, M.⁴

9
- 0038419230
- J. Viernow, J.-L. Lin, D. Y. Petrovykh, F. M. Leibsle, F. K. Men and F. J. Himpsel: Appl. Phys. Lett. 72 (1998) 948.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 948
- Viernow, J.¹ Lin, J.-L.² Petrovykh, D.Y.³ Leibsle, F.M.⁴ Men, F.K.⁵ Himpsel, F.J.⁶

10
- 0000229504
- J.-L. Lin, D. Y. Petrovykh, J. Viernow, F. K. Men, D. J. Seo and J. Himpsel: J. Appl. Phys. 84 (1998) 255.
- (1998) J. Appl. Phys. , vol.84 , pp. 255
- Lin, J.-L.¹ Petrovykh, D.Y.² Viernow, J.³ Men, F.K.⁴ Seo, D.J.⁵ Himpsel, J.⁶

11
- 0032621458
- J. Viemow, D. Y. Petrovykh, F. K. Men, A. Kirakosian, J.-L. Lin and F. J. Himpsel: Appl. Phys. Lett. 74 (1999) 2125.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 2125
- Viemow, J.¹ Petrovykh, D.Y.² Men, F.K.³ Kirakosian, A.⁴ Lin, J.-L.⁵ Himpsel, F.J.⁶

12
- 0003761323
- T. Sakaguchi, M. Watanabe and M. Asada: IEICE Trans. Jpn. 74 (1991) 58.
- (1991) IEICE Trans. Jpn. , vol.74 , pp. 58
- Sakaguchi, T.¹ Watanabe, M.² Asada, M.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.