Negative differential conductance due to resonant tunnelling through SiO2/single-crystalline-Si double barrier structure

Electronics Letters

Volumn 37, Issue 19, 2001, Pages 1200-1201

  Ishikawa, Y ^a   Ishihara, T ^a   Iwasaki, M ^a   Tabe, M ^a  

^a SHIZUOKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRONS; RESONANT TUNNELING; SILICA; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

NEGATIVE DIFFERENTIAL CONDUCTANCE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0035855675     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010817     Document Type: Article

References (8)

1. Resonant tunneling in semiconductor double barriers
2. 1-xAs double barrier structures
3. Electron resonant tunneling in Si/SiGe double barrier diodes
4. Resonant tunneling through amorphous silicon-silicon nitride double-barrier structures
5. Fabrication of novel Si double-barrier structures and their characteristics
6. 2 double barrier diodes using two-dimensional Si structures
7. 2 layer fabricated by wafer bonding
8. On tunneling in metal-oxide-silicon structures