High room temperature peak-to-valley current ratio in Si based Esaki diodes

Electronics Letters

Volumn 35, Issue 13, 1999, Pages 1111-1112

  Duschl, R ^a   Schmidt, O G ^a   Reitemann, G ^b   Kasper, E ^b   Eberl, K ^a  

^a University of Tübingen and International Max Planck Research School for Intelligent Systems   (Germany)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; EPITAXIAL GROWTH; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

ESAKI DIODES; PEAK-TO-VALLEY CURRENT RATIO (PVCR);

SEMICONDUCTOR DIODES;

EID: 0032652007     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19990728     Document Type: Article

References (6)

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