RTD/CMOS Nanoelectronic Circuits: Thin-Film InP-Based Resonant Tunneling Diodes Integrated with CMOS Circuits

IEEE Electron Device Letters

Volumn 20, Issue 3, 1999, Pages 119-122

  Bergman, J I ^a   Chang, J ^a   Joo, Y ^a   Matinpour, B ^a   Laskar, J ^a   Jokerst, N M ^a   Brooke, M A ^a   Brar, B ^b   Beam III, E ^c  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b RAYTHEON COMPANY   (United States)

^c TRIQUINT SEMICONDUCTOR   (United States)

Author keywords

III V compounds; Resonant tunneling diodes; Thin film integration

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; COMPARATOR CIRCUITS; SEMICONDUCTING INDIUM PHOSPHIDE; THIN FILMS;

RESONANT TUNNELING DIODES (RTD);

TUNNEL DIODES;

EID: 0033099192     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.748907     Document Type: Article

References (19)

1. max transferred-substrate heterojunction bipolar transistor IC technology," IEEE Electron Device Lett., vol. 19, pp. 77-79, Mar. 1998.
2. N. Evers, J. Laskar, N. M. Jokerst, T. S. Moise, and Y.-C. Kao, "Direct current and high-frequency performance of thin-film InP-based tunneling hot electron transfer amplifiers," Appl. Phys. Lett., vol. 70, pp. 2452-2454, 1997.
3. 0.47As/InAs resonant tunneling diodes integrated onto Si substrates," IEEE Electron Device Lett., vol. 17, pp. 443-445, Sept. 1996.
4. Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. H. Lo, "Wafer bonding technology and its applications in optoelectronic devices and materials," IEEE J. Select. Topics Quantum Electron., vol. 3, pp. 927-936, June 1997.
5. T. Morf, C. Biber, and W. Bächtold, "Effects of epitaxial lift-off on the DC, RF, and thermal properties of MESFET's on various host materials," IEEE Trans. Electron Devices, vol. 45, pp. 1407-1413, July 1998.
6. N. M. Jokerst, M. A. Brooke, O. Vendier, S. T. Wilkinson, S. Fike, M. Lee, E. Twyford, J. Cross, B. Buchanan, and S. Wills, "Thin-film multimaterial optoelectronic integrated circuits," IEEE Trans. Camp., Packag., Manufact. Technol. B, vol. 19, pp. 97-106, Feb. 1996.
7. S. M. Fike, B. Buchanan, N. M. Jokerst, M. A. Brooke, T. G. Morris, and S. P. DeWeerth, "8 × 8 array of thin-film photodetectors vertically electrically interconnected to silicon circuitry," IEEE Photon. Technol. Lett., vol. 7, pp. 1168-1170, Oct. 1995.
8. M. Lee, O. Vendier, M. Brooke, N. M. Jokerst, and R. P. Leavitt, "CMOS optical receiver with integrated compound semiconductor thin-film inverted MSM detector operating at 155 Mbps," in Proc. IEEE Lasers Electro-Optics Soc. 1995 Annu. Meet., Nov. 1994. pp. 47-48.
9. A. C. Seabaugh, A. H. Taddiken, E. A. Beam, III, J. N. Randall, Y.-C. Kao, and B. Newell, "Co-integrated resonant tunneling and heterojunction bipolar transistor full adder," in IEDM Tech. Dig., 1993, pp. 419-421.
10. K. Maezawa, T. Akeyoshi, and T. Mizutani, "Functions and applications of monostable-bistable transition logic elements (MOBILE'S) having multiple-input terminals," IEEE Trans. Electron Devices, vol. 41, pp. 148-154, Feb. 1994.
11. J. P. A. van der Wagt, A. C. Seabaugh, and E. A. Beam, III, "RTD/HFET low standby power SRAM gain cell," in IEDM Tech. Dig., 1996, pp. 425-428.
12. F. Capasso, S. Sen, F. Beltram, L. M. Lunardi, A. S. Vengurlekar, P. R. Smith, N. J. Shah, R. J. Malik, and A. Y. Cho, "Quantum functional devices: Resonant-tunneling transistors, circuits with reduced complexity, and multiple-valued logic," IEEE Trans. Electron Devices, vol. 36, pp. 2065-2081, Oct. 1989.
13. A. C. Seabaugh, Y.-C. Kao, and H.-T. Yuan, "Nine-state resonant tunneling diode memory," IEEE Electron Device Lett., vol. 13, pp. 479-481, Sept. 1992.
14. T. P. E. Broekaert, B. Brar, J. P. A. van der Wagt, A. C. Seabaugh, T. S. Moise, F. J. Morris, E. A. Beam, III, and G. A. Frazier, "A monolithic 4-bit 2 GSps resonant tunneling analog-to-digital converter," in Tech. Dig. IEEE GaAs IC Symp., 1997, pp. 187-190.
15. 0.47As /AlAs resonant-tunneling diodes measured by electro-optic sampling technique," IEEE Electron Device Lett., vol. 16, pp. 262-264, June 1995.
16. R. Blundell, D. C. Papa, E. R. Brown, and C. D. Parker, "Resonant tunneling diode oscillator as an alternative LO for SIS receiver applications," Electron. Lett., vol. 29. pp. 288-290, 1993.
17. G. Millington, R. E. Miles, R. D. Pollard, D. P. Steenson, and J. M. Chamberlain. "A resonant tunneling diode self-oscillating mixer with conversion gain," IEEE Microwave Guided Wave Lett., vol. 1, pp. 320-321, Nov. 1991.
18. T. C. L. G. Sollner, E. R. Brown, W. D. Goodhue, and C. A. Correa, "Harmonic multiplication using resonant tunneling," J. Appl. Phys., vol. 64, pp. 4248-4250, 1988.
19. I. Mehdi, J. R. East, and G. I. Haddad, "Characterization of resonant tunneling diodes for microwave and millimeter-wave detection," IEEE Trans. Microwave Theory Tech., vol. 39, pp. 1876-1880. Nov. 1991.