pnp Si resonant interband tunnel diode with symmetrical NDR

Electronics Letters

Volumn 37, Issue 23, 2001, Pages 1412-1414

  Jin, N ^a   Berger, P R ^a   Rommel, S L ^b   Thompson, P E ^c   Hobart, K P ^c  

^a Ohio State University   (United States)

^b University of Illinois at Urbana Champaign   (United States)

^c NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; TRANSISTORS;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR);

TUNNEL DIODES;

EID: 0035829523     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20010961     Document Type: Article

References (9)

1. 0.5/Si resonant interband tunneling diodes
2. Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory
3. Si resonant interband tunnel diodes grown by low temperature molecular beam epitaxy
4. High room temperature peak-to-valley current ratio in Si-based Esaki diodes
5. Esaki diode high-speed logical circuits
6. Tunneling-based SRAM
7. Interband resonant tunneling diode in δ-doped GaAs
8. Surface segregation and structure of Sb-doped Si(100) films grown at low temperature by molecular beam epitaxy
9. A p-on-n Si interband tunnel diode grown by molecular beam epitaxy