Silicon Tunnel Diodes Formed by Proximity Rapid Thermal Diffusion

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 393-401

  Wang, Jinli ^a   Wheeler, Dane ^a   Yan, Yan ^a   Zhao, Jialin ^a   Howard, Scott ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; DOPING (ADDITIVES); ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY;

RAPID THERMAL DIFFUSION;

TUNNEL DIODES;

EID: 0038144429     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

1. A. Seabaugh, B. Brar, T. Broekaert, F. Morris, G. Frazier, X. Deng, and T. Blake "Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory," Int. Electron Dev. Mtg. Technical Digest, pp. 429-432 (1998).
2. R. G. Swartz, "In perspective, the tunnel diode," IEEE Int. Sol. St. Circ. Conf., pp. 278-280 (1986).
3. M. W. Dashiell, R.T. Troeger, S.L. Rommel, T.N. Adam, P.R. Berger, C. Guedj, J.Kolodzey, A. Seabaugh, and R. Lake, "Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing," IEEE Trans. Electron Dev. 47, 1707-1714 (2000).
4. M. W. Dashiell, J. Kolodzey, P. Crozat, F. Aniel, and J.-M Lourtioz, "Microwave properties of silicon junction tunnel diodes grown by molecular beam epitaxy," IEEE Electron Dev. Lett. 23, 357-359 (2002).
5. S. L. Rommel, T. E. Dillon, M. W. Dashiell, H. Feng, J. Kolodzey, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, A. C. Seabaugh, G. Klimeck, and D. K. Blanks, "Epitaxially grown Si resonant interband tunnel diodes exhibiting high current densities," Electron Dev. Lett. 20, 329-331 (1999).
6. P. E. Thompson, K. D. Hobart, M. E. Twigg, G. G. Jernigan, T. E. Dillon, S. L. Rommel, P. R. Berger, D. S. Simons, P. H. Chi, R. Lake, and A. C. Seabaugh, "Si resonant interband tunnel diodes grown by low temperature molecular beam epitaxy," Appl. Phys. Lett. 75 1308-1310 (1999).
7. R. Duschl, O.G. Schmidt, G. Reitemann, and E. Kasper, "Epitaxially grown Si/SiGe interband tunneling diodes with high peak to-valley ratio," Appl. Phys. Lett. 76, 879-881 (2000).
8. U. Auer, W. Prost, M. Agethen, F.-J. Tegude, R. Duschl, and K. Eberl, "Low-voltage MOBILE logic module based on Si/SiGe interband tunneling diodes," IEEE Electron Dev. Lett. 22, 216-217 (2001).
9. W. Zagozdzon-Wosik, P. Grabiec, and G. Lux, "Fabrication of submicron junctions proximity rapid thermal diffusion of phosphorus, boron, and arsenic," IEEE Trans. Electron Dev. 41, 2281-2290 (1994).
10. A. G. Chynoweth, W. L. Feldmann, and R. A. Logan, "Excess tunnel current in silicon Esaki junctions," Phys. Rev. 121, 684-694 (1961).
11. V. M. Franks, K. F. Hulme, and J. R. Morgan, "An alloy process for making high current density silicon tunnel diode junctions," Solid State Electron. 8, 343-344 (1965).