A Si bistable diode utilizing interband tunneling junctions

Applied Physics Letters

Volumn 71, Issue 15, 1997, Pages 2190-2192

  Zhu, X ^a,b   Zheng, X ^a   Pak, M ^a   Tanner, M O ^a   Wang, K L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Rockwell Semiconductor Systems   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042539622     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119377     Document Type: Article

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