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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 290-293

`p-on-n' Si interband tunnel diode grown by molecular beam epitaxy

(7) Hobart, K D a Thompson, P E a Rommel, S L b Dillon, T E b Berger, P R b Simons, D S c Chi, P H c

a NAVAL RESEARCH LABORATORY (United States)

b UNIVERSITY OF DELAWARE (United States)

c NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; LOW TEMPERATURE OPERATIONS; MOLECULAR BEAM EPITAXY; NEGATIVE RESISTANCE; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING;

NEGATIVE DIFFERENTIAL RESISTANCE (NDR); PEAK-TO-VALLEY CURRENT RATIO (PVCR);

TUNNEL DIODES;

EID: 0035083659 PISSN: 0734211X EISSN: None Source Type: Journal
DOI: 10.1116/1.1339011 Document Type: Article

Times cited : (16)

References (13)

1
- 0000284042
- S. L. Rommel et al., Appl. Phys. Lett. 73, 2191 (1998).
- (1998) Appl. Phys. Lett. , vol.73 , pp. 2191
- Rommel, S.L.¹

2
- 0033164907
- S. L. Rommel, T. E. Dillon, P. R. Berger, P. E. Thompson, K. D. Hobart, R. Lake, and A. C. Seabaugh, IEEE Electron Device Lett. 20, 329 (1999).
- (1999) IEEE Electron Device Lett. , vol.20 , pp. 329
- Rommel, S.L.¹ Dillon, T.E.² Berger, P.R.³ Thompson, P.E.⁴ Hobart, K.D.⁵ Lake, R.⁶ Seabaugh, A.C.⁷

3
- 0032652007
- R. Duschl, O. G. Schmidt, G. Reitemann, E. Kasper, and K. Eberl, Electron. Lett. 35, 1111 (1999).
- (1999) Electron. Lett. , vol.35 , pp. 1111
- Duschl, R.¹ Schmidt, O.G.² Reitemann, G.³ Kasper, E.⁴ Eberl, K.⁵

4
- 0032621145
- P. E. Thompson et al., Appl. Phys. Lett. 75, 1308 (1999).
- (1999) Appl. Phys. Lett. , vol.75 , pp. 1308
- Thompson, P.E.¹

5
- 0000194609
- R. Duschl, O. G. Schmidt, and K. Eberl, Appl. Phys. Lett. 76, 879 (2000).
- (2000) Appl. Phys. Lett. , vol.76 , pp. 879
- Duschl, R.¹ Schmidt, O.G.² Eberl, K.³

6
- 0002208646
- K. D. Hobart, F. J. Kub, G. G. Jernigan, and P. E. Thompson, J. Vac. Sci. Technol. B 14, 2229 (1996).
- (1996) J. Vac. Sci. Technol. B , vol.14 , pp. 2229
- Hobart, K.D.¹ Kub, F.J.² Jernigan, G.G.³ Thompson, P.E.⁴

7
- 0029341728
- K. D. Hobart, D. J. Godbey, M. E. Twigg, M. Fatemi, P. E. Thompson, and D. S. Simons, Surf. Sci. 334, 29 (1995).
- (1995) Surf. Sci. , vol.334 , pp. 29
- Hobart, K.D.¹ Godbey, D.J.² Twigg, M.E.³ Fatemi, M.⁴ Thompson, P.E.⁵ Simons, D.S.⁶

8
- 0019607487
- S. S. Iyer, R. A. Metzger, and F. G. Allen, J. Appl. Phys. 52, 5608 (1981).
- (1981) J. Appl. Phys. , vol.52 , pp. 5608
- Iyer, S.S.¹ Metzger, R.A.² Allen, F.G.³

9
- 0001312034
- J.-P. Noël, J. E. Greene, N. L. Rowell, and D. C. Houghton, Appl. Phys. Lett. 56, 265 (1990).
- (1990) Appl. Phys. Lett. , vol.56 , pp. 265
- Noël, J.-P.¹ Greene, J.E.² Rowell, N.L.³ Houghton, D.C.⁴

10
- 1642549758
- K. D. Hobart, D. J. Godbey, P. E. Thompson, and D. S. Simons, J. Vac. Sci. Technol. B 11, 1115 (1993).
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 1115
- Hobart, K.D.¹ Godbey, D.J.² Thompson, P.E.³ Simons, D.S.⁴

11
- 36449004565
- S. Fukatsu, K. Fujita, H. Yaguchi, Y. Shiraki, and R. Ito, Appl. Phys. Lett. 59, 2103 (1991).
- (1991) Appl. Phys. Lett. , vol.59 , pp. 2103
- Fukatsu, S.¹ Fujita, K.² Yaguchi, H.³ Shiraki, Y.⁴ Ito, R.⁵

12
- 0000466502
- P. E. Thompson, M. E. Twigg, D. J. Godbey, K. D. Hobart, and D. S. Simons, J. Vac. Sci. Technol. B 11, 1077 (1993).
- (1993) J. Vac. Sci. Technol. B , vol.11 , pp. 1077
- Thompson, P.E.¹ Twigg, M.E.² Godbey, D.J.³ Hobart, K.D.⁴ Simons, D.S.⁵

13
- 0004005306
- Wiley, New York
- S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 520-530.
- (1981) Physics of Semiconductor Devices, 2nd Ed. , pp. 520-530
- Sze, S.M.¹

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