Fluoride resonant tunneling diodes co-integrated with Si-MOSFETs

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2598-2601

  Terayama, Toshiaki ^a   Sekine, Hiroshi ^a   Tsutsui, Kazuo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CaF2; CdF2; Co integration; Fluoride; Resonant tunneling diode (RTD); SRAM

Indexed keywords

DIODES; FLUORIDE MINERALS; IONS; MOSFET DEVICES; PHOSPHORUS; SILICON; STATIC RANDOM ACCESS STORAGE;

CAF2; CDF2; CO-INTEGRATION; FLUORIDE; RESONANT TUNNELING DIODE (RTD);

RESONANT TUNNELING;

EID: 0038447345     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2598     Document Type: Article

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