SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Superlattices and Microstructures

Volumn 30, Issue 4, 2001, Pages 201-204

The effect of interface quality on Si/SiO2 resonant tunnel diodes

(3) Sandu, T a Lake, R b Kirk, W P a

a UNIVERSITY OF TEXAS AT ARLINGTON (United States)

b University of California Riverside (United States)

Author keywords

Interface roughness; Oxide; Resonant tunnel diode; Silicon

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; INTERFACES (MATERIALS); MONOLAYERS; RESONANT TUNNELING; SEMICONDUCTING SILICON; SILICA; SURFACE ROUGHNESS;

RESONANT TUNNEL DIODES (RTD);

TUNNEL DIODES;

EID: 0035714095 PISSN: 07496036 EISSN: None Source Type: Journal
DOI: 10.1006/spmi.2001.1008 Document Type: Article

Times cited : (4)

References (14)

1
- 0001047262
- (1998) IEEE J. Solid-State Circuits , vol.33 , pp. 1342
- Broekaert, T.P.E.¹ Brar, B.² Van der Wagt, J.P.A.³ Seabaugh, A.C.⁴ Morris, F.J.⁵ Moise, T.S.⁶ Beam III, E.A.⁷ Frazier, G.A.⁸

2
- 0035821979
- (2001) Electron. Lett. , vol.37 , pp. 758
- Fay, P.¹ Jiang, L.² Xu, Y.³ Bernstein, G.H.⁴ Gonzalez, A.⁵ Mazumder, P.⁶ Chow, D.H.⁷ Schulman, J.N.⁸

3
- 0035366332
- (2001) IEEE Trans. Electron Devices , vol.48 , pp. 1282
- Fay, P.¹ Jiang, L.² Xu, Y.³ Bernstein, G.H.⁴ Chow, D.H.⁵ Schulman, J.N.⁶ Dunlap, H.L.⁷ De los Santos, H.J.⁸

4
- 0034594103
- IEEE, New York
- (2000) Proceedings 2000 IEEE/Cornell Conference on High Performance Devices , pp. 42
- Lin, C.-H.¹ Yang, K.² Gonza'Lez, A.F.³ East, J.R.⁴ Mazumder, P.⁵ Haddad, G.I.⁶ Chow, D.H.⁷ Warren, L.D.⁸ Dunlap, H.L.⁹ Roth, H.A.¹⁰ Thomas III, S.¹¹

5
- 0032294972
- (1998) IEEE Electron Device Lett. , vol.19 , pp. 478
- Chen, C.L.¹ Mahoney, L.J.² Calawa, S.D.³ Mathews, R.H.⁴ Molvar, K.M.⁵ Sage, J.P.⁶ Maki, P.A.⁷ Sollner, T.C.L.G.⁸

6
- 0035307596
- (2001) IEEE Electron Device Lett. , vol.22 , pp. 182
- See, P.¹ Paul, D.J.² Hollander, B.³ Mantl, S.⁴ Zozoulenko, I.V.⁵ Berggren, K.-F.⁶

7
- 85031474723
- U.S. Patent 5,796,119
- Seabaugh, A.¹

8
- 85031476386
- Final Report for Silicon-Based Quantum MOS Technology Development Contract No. F49620-96-C-006 prepared by Raytheon Systems Co. for AFOSR

9
- 0008322965
- Compound semiconductors 1997
- IEEE, New York
- (1998) Proceedings of the IEEE 24th International Symposium on Compound Semiconductors , pp. 617
- Lake, R.¹ Brar, B.² Wilk, G.³ Seabaugh, A.⁴ Klimeck, G.⁵

10
- 0029766290
- (1996) Superlatt. Microstruct. , vol.20 , pp. 279
- Lake, R.¹ Klimeck, G.² Bowen, R.C.³ Fernando, C.⁴ Moise, T.⁵ Kao, Y.C.⁶ Leng, M.⁷

11
- 0342723158
- (1997) J. Appl. Phys. , vol.81 , pp. 7845
- Lake, R.¹ Klimeck, G.² Bowen, R.C.³ Jovanovic, D.⁴

12
- 0000145174
- (1998) Phys. Rev. , vol.B58 , pp. 7279
- Klimeck, G.¹ Lake, R.² Blanks, D.K.³

13
- 0002499041
- Compound semiconductors 1997
- IEEE, New York
- (1998) Proceedings of the IEEE 24th International Symposium on Compound Semiconductors , pp. 639
- Blanks, D.K.¹ Klimeck, G.² Lake, R.³ Jovanovic, D.⁴ Bowen, R.C.⁵ Fernando, C.⁶ Frensley, W.⁷ Leng, M.⁸

14
- 0000697110
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2728
- Brar, B.¹ Wilk, G.² Seabaugh, A.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.