Electrochemical growth of gold on well-defined vicinal H-Si(1 1 1) surfaces studied by AFM and XRD

Surface Science

Volumn 537, Issue 1-3, 2003, Pages 95-112

  Munford, M L ^a,b   Maroun, F ^a,c   Cortes R ^a,c   Allongue, P ^a,c   Pasa, A A ^b  

^a Université Pierre et Marie Curie   (France)

^b FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

^c LABORATOIRE DE PHYSIQUE DE LA MATIÈRE CONDENSÉE   (France)

Author keywords

Atomic force microscopy; Electrochemical methods; Epitaxy; Gold; Growth; Silicon; X ray scattering, diffraction, and reflection

Indexed keywords

ATOMIC FORCE MICROSCOPY; EPITAXIAL GROWTH; ETCHING; MONOLAYERS; NUCLEATION; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

ELECTROCHEMICAL GROWTH;

GOLD;

EID: 0038411414     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(03)00563-6     Document Type: Article

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