The preparation of ideally ordered flat H-Si(111) surfaces

Sensors and Materials

Volumn 13, Issue 5, 2001, Pages 259-269

  Munford, Maximiliano L ^a,b   Cortès, Robert ^a   Allongue, Philippe ^a  

^a Université Pierre et Marie Curie   (France)

^b FEDERAL UNIVERSITY OF SANTA CATARINA   (Brazil)

Author keywords

AFM; Anisotropic etching; Silicon; Surface structure

Indexed keywords

EID: 0035649018     PISSN: 09144935     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)

1. G. S. Higashi, Y. J. Chabal, G. W. Trucks and K. Raghavachari: Appl. Phys. Lett. 56 (1990) 656.
2. P. Jakob and Y. J. Chabal: J. Chem. Phys. 95 (1991) 2397.
3. H. E. Hessel, A. Feltz, U. Memmert and R. J. Behm: Chem. Phys. Lett. 186 (1991) 275.
4. G. Pietsch, U. Köhler and M. Henzler: J. Appl. Phys. 73 (1993) 4797.
5. C. P. Wade and C. E. D. Chidsey: Appl. Phys. Lett. 71 (1997) 1679.
6. a) H. Fukidome: Ph. D. thesis, Osaka University (2000);
7. b) H. Fukidome, M. Matsumura, T. Komeda, K. Mamba and Y. Nishika: Electrochem. and Solid State Lett. 2 (1999) 393.
8. P. Allongue, C. Henry de Villeneuve, S. Morin, R. Boukherroub and D. D. M. Wayner: Electrochim. Acta 45 (2000) 4591.
9. J. Kasparian, M. Elwenspoek and P. Allongue: Surf. Sci. 388 (1997) 50.
10. J. Kasparian and P. Allongue: Electrochemical Society Meeting Proc. PV-97-20 (1997) p. 220.
11. J. Flidr, Y.-C. Huang, T. Newton and M. Hines: J. Chem. Phys. 108 (1998) 5542.
12. P. Allongue, V. Kieling and H. Gerischer: Electrochim. Acta 40 (1995) 1353.
13. H. Gerischer, P. Allongue and V. Costa-Kieling: Ber. Bunsenges. Phys. Chem. 97 (1993) 753.
14. T. Baum and D. J. Schiffrin: J. Electroanal. Chem. 436 (1997) 239.
15. H. Fukidome, M. Matsumura, T. Komeda, K. Namba and Y. Nishioka: Electrochem. and Solid-State Lett. 2 (1999) 393.
16. a) P. Allongue, V. Kieling and H. Gerischer: J. Electrochem. Soc. 140 (1993) 1008;
17. b) P. Allongue, V. Kieling and H. Gerischer: J. Electrochem. Soc. 140 (1993) 1018.
18. E. D. Palik, O. J. Glmebocki and I. Heard Jr.: J. Electrochem. Soc. 134 (1987) 404.