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Volumn 383, Issue 1, 1997, Pages 25-36

The growth of indium on the H-terminated Si(111) 1 × 1 surface

(4) Leisenberger, F P a Ofner H a Ramsey, M G a Netzer, F P a

Author keywords

Adsorption; Indium; Island growth; Photoelectron spectroscopy; Scanning tunneling microscopy; Silicon; Surfactant; Synchrotron radiation

Indexed keywords

ADSORPTION; FILM GROWTH; HYDROGEN; INDIUM; PHOTOELECTRON SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SURFACE ACTIVE AGENTS; SYNCHROTRON RADIATION; THIN FILMS;

CHEMICAL INTERACTIONS; ISLAND GROWTH;

SURFACES;

EID: 0031190113 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(97)00112-X Document Type: Article

Times cited : (29)

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