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Volumn 32, Issue 5, 1999, Pages 447-454

Fabrication and integration of nanostructures on Si surfaces

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

EID: 0033016305     PISSN: 00014842     EISSN: None     Source Type: Journal    
DOI: 10.1021/ar970235o     Document Type: Review
Times cited : (42)

References (48)
  • 1
    • 21144480018 scopus 로고
    • Scanning tunneling microscope tip-sample interactions: Atomic modification of Si and nanometer Si Schottky diodes
    • Avouris, Ph.; Lyo, I.-W.; Hasegawa, Y. Scanning tunneling microscope tip-sample interactions: Atomic modification of Si and nanometer Si Schottky diodes. J. Vac. Sci. Technol., A 1993, 11, 1725-1732.
    • (1993) J. Vac. Sci. Technol., A , vol.11 , pp. 1725-1732
    • Avouris, Ph.1    Lyo, I.-W.2    Hasegawa, Y.3
  • 3
    • 0001186215 scopus 로고    scopus 로고
    • Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning
    • Shen, T.-C.; Wang, C.; Tucher, J. R. Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning. Phys. Rev. Lett. 1997, 78, 1271-1274.
    • (1997) Phys. Rev. Lett. , vol.78 , pp. 1271-1274
    • Shen, T.-C.1    Wang, C.2    Tucher, J.R.3
  • 4
    • 3643091322 scopus 로고
    • Local hydride formation of the Si(111)-(7 × 7) surface by hydrogen atoms deposited from a scanning tunneling microscope tip
    • Kuramochi, H.; Uchida, H.; Aono, M. Local hydride formation of the Si(111)-(7 × 7) surface by hydrogen atoms deposited from a scanning tunneling microscope tip. Phys. Rev. Lett. 1994, 72, 932-935.
    • (1994) Phys. Rev. Lett. , vol.72 , pp. 932-935
    • Kuramochi, H.1    Uchida, H.2    Aono, M.3
  • 5
    • 0000038421 scopus 로고    scopus 로고
    • Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes
    • Ogino, T.; Hibino, H.; Prabhakaran, K. Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes. J. Vac. Sci. Technol., B 1996, 14, 4134-4139.
    • (1996) J. Vac. Sci. Technol., B , vol.14 , pp. 4134-4139
    • Ogino, T.1    Hibino, H.2    Prabhakaran, K.3
  • 6
    • 0031249362 scopus 로고    scopus 로고
    • Self-organized nanoscale structures in Si/Ge films
    • Liu, F.; Lagally, M. G. Self-organized nanoscale structures in Si/Ge films. Surf. Sci. 1997, 386,169-181.
    • (1997) Surf. Sci. , vol.386 , pp. 169-181
    • Liu, F.1    Lagally, M.G.2
  • 7
    • 0031249203 scopus 로고    scopus 로고
    • Self-organization of nanostructures on Si wafers using surface structure control
    • Ogino, T. Self-organization of nanostructures on Si wafers using surface structure control. Surf. Sci. 1997, 386, 137-148.
    • (1997) Surf. Sci. , vol.386 , pp. 137-148
    • Ogino, T.1
  • 9
    • 0028461636 scopus 로고
    • Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self-organized on GaAs (311)B substrates
    • Nötzel, R.; Temmyo, J.; Kamada, H.; Furuta, T.; Tamamura, T. Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self-organized on GaAs (311)B substrates. Appl. Phys. Lett. 1994, 65, 457-459.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 457-459
    • Nötzel, R.1    Temmyo, J.2    Kamada, H.3    Furuta, T.4    Tamamura, T.5
  • 10
    • 21544448020 scopus 로고
    • Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition
    • Oshinowo, J.; Nishioka, M.; Ishida, S.; Arakawa, Y. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition. Appl. Phys. Lett. 1994, 65, 1421-1423.
    • (1994) Appl. Phys. Lett. , vol.65 , pp. 1421-1423
    • Oshinowo, J.1    Nishioka, M.2    Ishida, S.3    Arakawa, Y.4
  • 12
    • 8544258739 scopus 로고
    • Atomic structure of hydrogen-terminated Si(111) surfaces by hydrofluoric acid treatments
    • Morita, Y.; Miki, K.; Tokumoto, H. Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments. Jpn. J. Appl. Phys. 1991, 30, 3570-3574.
    • (1991) Jpn. J. Appl. Phys. , vol.30 , pp. 3570-3574
    • Morita, Y.1    Miki, K.2    Tokumoto, H.3
  • 13
    • 11644283926 scopus 로고
    • Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction
    • Takayanagi, K.; Tanishiro, Y.; Takahashi, S.; Takahashi, M. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction. Surf. Sci. 1985, 164, 367-392.
    • (1985) Surf. Sci. , vol.164 , pp. 367-392
    • Takayanagi, K.1    Tanishiro, Y.2    Takahashi, S.3    Takahashi, M.4
  • 14
    • 0000578209 scopus 로고
    • Atom-resolved surface chemistry: The early steps of Si(111)-7 × 7 oxidation
    • Avouris, Ph.; Lyo, I.-W.; Bozso, F. Atom-resolved surface chemistry: The early steps of Si(111)-7 × 7 oxidation. J. Vac. Sci. Technol., B 1991, 9, 424-430.
    • (1991) J. Vac. Sci. Technol., B , vol.9 , pp. 424-430
    • Avouris, Ph.1    Lyo, I.-W.2    Bozso, F.3
  • 15
    • 0001125147 scopus 로고
    • Successive oxidation stages and annealing behavior of the Si(111) 7 × 7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy
    • Pelz, J. P.; Koch, R. H. Successive oxidation stages and annealing behavior of the Si(111) 7 × 7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy. J. Vac. Sci. Technol, B 1991, 9, 775-778.
    • (1991) J. Vac. Sci. Technol, B , vol.9 , pp. 775-778
    • Pelz, J.P.1    Koch, R.H.2
  • 16
    • 0013134128 scopus 로고    scopus 로고
    • Stripe patterns formed by the thermal desorption of Ga atoms on Ga-terminated Si(111) surfaces
    • Fujita, K.; Kusumi, Y.; Ichikawa, M. Stripe patterns formed by the thermal desorption of Ga atoms on Ga-terminated Si(111) surfaces. Appl. Phys. Lett. 1996, 68, 631-633.
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 631-633
    • Fujita, K.1    Kusumi, Y.2    Ichikawa, M.3
  • 17
    • 0342626629 scopus 로고
    • Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111)
    • Hibino, H.; Ogino, T. Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111). Phys. Rev. B 1994, 49, 5765-5768.
    • (1994) Phys. Rev. B , vol.49 , pp. 5765-5768
    • Hibino, H.1    Ogino, T.2
  • 18
    • 0342626631 scopus 로고
    • Preservation of a 7 × 7 periodicity at a buried amorphous-Si/Si(111) interface
    • Gibson, J. M.; Gossmann, H.-J.; Bean, J. C.; Tung, R. T.; Feldman, L. C. Preservation of a 7 × 7 periodicity at a buried amorphous-Si/Si(111) interface. Phys. Rev. Lett. 1986, 56, 355-358.
    • (1986) Phys. Rev. Lett. , vol.56 , pp. 355-358
    • Gibson, J.M.1    Gossmann, H.-J.2    Bean, J.C.3    Tung, R.T.4    Feldman, L.C.5
  • 20
    • 35949008890 scopus 로고
    • Temperature dependence of vicinal Si(111) surfaces
    • Phaneuf, R. J.; Williams, E. D.; Bartelt, N. C. Temperature dependence of vicinal Si(111) surfaces. Phys. Rev. B 1988, 38, 1984-1993.
    • (1988) Phys. Rev. B , vol.38 , pp. 1984-1993
    • Phaneuf, R.J.1    Williams, E.D.2    Bartelt, N.C.3
  • 21
    • 0000972042 scopus 로고
    • High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface
    • Hibino, H.; Fukuda, T.; Suzuki, M.; Homma, Y.; Sato, T.; Iwatsuki, M.; Miki, K.; Tokumoto, H. High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface. Phys. Rev. B 1993, 47, 13027-13030.
    • (1993) Phys. Rev. B , vol.47 , pp. 13027-13030
    • Hibino, H.1    Fukuda, T.2    Suzuki, M.3    Homma, Y.4    Sato, T.5    Iwatsuki, M.6    Miki, K.7    Tokumoto, H.8
  • 22
    • 0000501145 scopus 로고
    • Transient step bunching on a vicinal Si(111) surface
    • Hibino, H.; Ogino, T. Transient step bunching on a vicinal Si(111) surface. Phys. Rev. Lett. 1994, 72, 657-660.
    • (1994) Phys. Rev. Lett. , vol.72 , pp. 657-660
    • Hibino, H.1    Ogino, T.2
  • 23
    • 4244159584 scopus 로고    scopus 로고
    • Step arrangement design and nanostructure self-organization on Si surfaces
    • Ogino, T.; Hibino, H.; Homma, Y. Step arrangement design and nanostructure self-organization on Si surfaces. Appl. Surf. Sci. 1997, 117/118, 642-651.
    • (1997) Appl. Surf. Sci. , vol.117-118 , pp. 642-651
    • Ogino, T.1    Hibino, H.2    Homma, Y.3
  • 24
    • 0030566281 scopus 로고    scopus 로고
    • Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control
    • Ogino, T.; Hibino, H.; Homma, Y. Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control. Appl. Surf. Sci. 1996, 107, 1-5.
    • (1996) Appl. Surf. Sci. , vol.107 , pp. 1-5
    • Ogino, T.1    Hibino, H.2    Homma, Y.3
  • 25
    • 0001493057 scopus 로고
    • Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111)
    • Hibino, H.; Ogino, T. Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111). Appl. Phys. Lett. 1995, 67, 915-917.
    • (1995) Appl. Phys. Lett. , vol.67 , pp. 915-917
    • Hibino, H.1    Ogino, T.2
  • 29
    • 3643130905 scopus 로고
    • Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
    • Eaglesham, D. J.; Cerullo, M. Dislocation-Free Stranski-Krastanow Growth of Ge on Si(100). Phys. Rev. Lett. 1990, 64, 1943-1946.
    • (1990) Phys. Rev. Lett. , vol.64 , pp. 1943-1946
    • Eaglesham, D.J.1    Cerullo, M.2
  • 31
    • 4344708593 scopus 로고    scopus 로고
    • Coarsening of self-assembled Ge quantum dots on Si(001)
    • Ross, F. M.; Tersoff, J.; Tromp, R. M. Coarsening of Self-Assembled Ge Quantum Dots on Si(001) Phys. Rev. Lett. 1998, 80, 984-987.
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 984-987
    • Ross, F.M.1    Tersoff, J.2    Tromp, R.M.3
  • 32
    • 0000533566 scopus 로고    scopus 로고
    • Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures
    • Kamins, T. I.; Carr, E. C.; Williams, R. S.; Rosner, S. J. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures. J. Appl. Phys. 1997, 81, 211-219.
    • (1997) J. Appl. Phys. , vol.81 , pp. 211-219
    • Kamins, T.I.1    Carr, E.C.2    Williams, R.S.3    Rosner, S.J.4
  • 33
    • 6444232373 scopus 로고    scopus 로고
    • Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium
    • Daruka, I.; Barabási, A.-L. Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium. Phys. Rev. Lett. 1997, 79, 3708-3711.
    • (1997) Phys. Rev. Lett. , vol.79 , pp. 3708-3711
    • Daruka, I.1    Barabási, A.-L.2
  • 34
    • 21144475796 scopus 로고
    • Mesh pattern of Ge islands grown using solid-phase epitaxy
    • Hibino, H.; Shimizu, N.; Shinoda, Y. Mesh pattern of Ge islands grown using solid-phase epitaxy. J. Vac. Sci. Technol., A 1993, 11, 2458-2462.
    • (1993) J. Vac. Sci. Technol., A , vol.11 , pp. 2458-2462
    • Hibino, H.1    Shimizu, N.2    Shinoda, Y.3
  • 36
    • 0001712799 scopus 로고    scopus 로고
    • Self-assembled Ge nanowires grown on Si(113)
    • Omi, H.; Ogino, T. Self-assembled Ge nanowires grown on Si(113). Appl. Phys. Lett. 1997, 71, 2163-2165.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 2163-2165
    • Omi, H.1    Ogino, T.2
  • 37
    • 0031237188 scopus 로고    scopus 로고
    • Lithographic positioning of self-assembled Ge islands on Si(001)
    • Kamins, T. I.; Williams, R. S. Lithographic positioning of self-assembled Ge islands on Si(001). Appl. Phys. Lett. 1997, 71, 1201-1203.
    • (1997) Appl. Phys. Lett. , vol.71 , pp. 1201-1203
    • Kamins, T.I.1    Williams, R.S.2
  • 38
    • 2842567225 scopus 로고    scopus 로고
    • Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films
    • Teichert, C.; Lagally, M. G.; Peticolas, L. J.; Bean, J. C.; Tersoff, J. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films. Phys. Rev. B 1996, 53, 16334-16337.
    • (1996) Phys. Rev. B , vol.53 , pp. 16334-16337
    • Teichert, C.1    Lagally, M.G.2    Peticolas, L.J.3    Bean, J.C.4    Tersoff, J.5
  • 39
    • 7244257542 scopus 로고    scopus 로고
    • Self-organization in growth of quantum dot superlattices
    • Tersoff, J.; Teichert, C.; Lagally, M. G. Self-organization in growth of quantum dot superlattices. Phys. Rev. Lett. 1996, 76, 1675-1678.
    • (1996) Phys. Rev. Lett. , vol.76 , pp. 1675-1678
    • Tersoff, J.1    Teichert, C.2    Lagally, M.G.3
  • 40
    • 0032099131 scopus 로고    scopus 로고
    • Self-organization of nanoscale Ge islands Si/Ge/Si(113) multilayers
    • Omi, H.; Ogino, T. Self-organization of nanoscale Ge islands Si/Ge/Si(113) multilayers. Appl. Surf. Sci. 1998, 130-132, 781-785.
    • (1998) Appl. Surf. Sci. , vol.130-132 , pp. 781-785
    • Omi, H.1    Ogino, T.2
  • 44
    • 0030373780 scopus 로고    scopus 로고
    • Sumitomo, K. Fabrication of multi-level buried oxide layers by oxygen-ion-implantation into Si/Ge multilayers
    • Ogino, T.; Kobayashi, Y.; Prabhakaran, K.; Sumitomo, K. Fabrication of multi-level buried oxide layers by oxygen-ion-implantation into Si/Ge multilayers. Mater. Res. Soc. Symp. Proc. 1997,438, 211-216.
    • (1997) Mater. Res. Soc. Symp. Proc. , vol.438 , pp. 211-216
    • Ogino, T.1    Kobayashi, Y.2    Prabhakaran, K.3
  • 46
    • 0001373034 scopus 로고    scopus 로고
    • Fabrication of buried epitaxial CoSi2 layer through selective diffusion
    • Prabhakaran, K.; Sumitomo, K.; Ogino, T. Fabrication of buried epitaxial CoSi2 layer through selective diffusion. Appl. Phys. Lett. 1997, 70, 607-609.
    • (1997) Appl. Phys. Lett. , vol.70 , pp. 607-609
    • Prabhakaran, K.1    Sumitomo, K.2    Ogino, T.3
  • 47
    • 0344181547 scopus 로고
    • Bistable saturation in coupled quantum-dot cells
    • Tougaw, P. D.; Lent, C. S.; Porod, W. Bistable saturation in coupled quantum-dot cells. J. Appl. Phys. 1993, 74, 3558-3566.
    • (1993) J. Appl. Phys. , vol.74 , pp. 3558-3566
    • Tougaw, P.D.1    Lent, C.S.2    Porod, W.3
  • 48
    • 0031145140 scopus 로고    scopus 로고
    • Cellular-automaton circuits using single-electron-tunneling junctions
    • Wu, N.-J.; Asahi, N.; Amemiya, Y. Cellular-automaton circuits using single-electron-tunneling junctions. Jpn. J. Appl. Phys. 1997, 36, 2621-2627.
    • (1997) Jpn. J. Appl. Phys. , vol.36 , pp. 2621-2627
    • Wu, N.-J.1    Asahi, N.2    Amemiya, Y.3


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