Fabrication and integration of nanostructures on Si surfaces

Accounts of Chemical Research

Volumn 32, Issue 5, 1999, Pages 447-454

  Ogino, Toshio ^a   Hibino, Hiroki ^a   Homma, Yoshikazu ^a   Kobayashi, Yoshihiro ^a   Prabhakaran, Kuniyil ^a   Sumitomo, Koji ^a   Omi, Hiroo ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; SILICON;

NANOPARTICLE; OXIDATION; PHYSICAL CHEMISTRY; REACTION ANALYSIS; REVIEW; STRUCTURE ANALYSIS; SURFACE PROPERTY; SYNTHESIS; TECHNIQUE;

EID: 0033016305     PISSN: 00014842     EISSN: None     Source Type: Journal    
DOI: 10.1021/ar970235o     Document Type: Review

References (48)

1. Avouris, Ph.; Lyo, I.-W.; Hasegawa, Y. Scanning tunneling microscope tip-sample interactions: Atomic modification of Si and nanometer Si Schottky diodes. J. Vac. Sci. Technol., A 1993, 11, 1725-1732.
2. Shen, T.-C; Wang, C.; Abeln, G. C; Tucher, J. R.; Lyding, J. W.; Avouris, Ph.; Walkup, R. E. Atomic-scale desorption through electronic and vibrational excitation mechanisms. Science 1995, 268, 1590-1592.
3. Shen, T.-C.; Wang, C.; Tucher, J. R. Al nucleation on monohydride and bare Si(001) surfaces: Atomic scale patterning. Phys. Rev. Lett. 1997, 78, 1271-1274.
4. Kuramochi, H.; Uchida, H.; Aono, M. Local hydride formation of the Si(111)-(7 × 7) surface by hydrogen atoms deposited from a scanning tunneling microscope tip. Phys. Rev. Lett. 1994, 72, 932-935.
5. Ogino, T.; Hibino, H.; Prabhakaran, K. Fabrication of nanostructures on silicon surfaces on wafer scale by controlling self-organization processes. J. Vac. Sci. Technol., B 1996, 14, 4134-4139.
6. Liu, F.; Lagally, M. G. Self-organized nanoscale structures in Si/Ge films. Surf. Sci. 1997, 386,169-181.
7. Ogino, T. Self-organization of nanostructures on Si wafers using surface structure control. Surf. Sci. 1997, 386, 137-148.
8. Moison, J. M.; Houzay, F.; Barthe, F.; Leprince, L.; Andre', E.; Vatel, O. Self-organized growth of regular nanometer-scale InAs dots on GaAs. Appl. Phys. Lett. 1994, 64, 196-198.
9. Nötzel, R.; Temmyo, J.; Kamada, H.; Furuta, T.; Tamamura, T. Strong photoluminescence emission at room temperature of strained InGaAs quantum disks (200-30 nm diameter) self-organized on GaAs (311)B substrates. Appl. Phys. Lett. 1994, 65, 457-459.
10. Oshinowo, J.; Nishioka, M.; Ishida, S.; Arakawa, Y. Highly uniform InGaAs/GaAs quantum dots (∼15 nm) by metalorganic chemical vapor deposition. Appl. Phys. Lett. 1994, 65, 1421-1423.
11. 4F versus HF. Appl. Phys. Lett. 1991, 58, 1656-1658.
12. Morita, Y.; Miki, K.; Tokumoto, H. Atomic Structure of Hydrogen-Terminated Si(111) Surfaces by Hydrofluoric Acid Treatments. Jpn. J. Appl. Phys. 1991, 30, 3570-3574.
13. Takayanagi, K.; Tanishiro, Y.; Takahashi, S.; Takahashi, M. Structure analysis of Si(111)-7 × 7 reconstructed surface by transmission electron diffraction. Surf. Sci. 1985, 164, 367-392.
14. Avouris, Ph.; Lyo, I.-W.; Bozso, F. Atom-resolved surface chemistry: The early steps of Si(111)-7 × 7 oxidation. J. Vac. Sci. Technol., B 1991, 9, 424-430.
15. Pelz, J. P.; Koch, R. H. Successive oxidation stages and annealing behavior of the Si(111) 7 × 7 surface observed with scanning tunneling microscopy and scanning tunneling spectroscopy. J. Vac. Sci. Technol, B 1991, 9, 775-778.
16. Fujita, K.; Kusumi, Y.; Ichikawa, M. Stripe patterns formed by the thermal desorption of Ga atoms on Ga-terminated Si(111) surfaces. Appl. Phys. Lett. 1996, 68, 631-633.
17. Hibino, H.; Ogino, T. Trace of interface reconstruction in Ge solid-phase epitaxy on Si(111). Phys. Rev. B 1994, 49, 5765-5768.
18. Gibson, J. M.; Gossmann, H.-J.; Bean, J. C.; Tung, R. T.; Feldman, L. C. Preservation of a 7 × 7 periodicity at a buried amorphous-Si/Si(111) interface. Phys. Rev. Lett. 1986, 56, 355-358.
19. Bartelt, N. C.; Williams, E. D.; Phaneuf, R. J.; Yang, Y.; Das Sarma, S. Orientational stability of silicon surfaces. J. Vac. Sci. Technol., A 1989, 7, 1898-1905.
20. Phaneuf, R. J.; Williams, E. D.; Bartelt, N. C. Temperature dependence of vicinal Si(111) surfaces. Phys. Rev. B 1988, 38, 1984-1993.
21. Hibino, H.; Fukuda, T.; Suzuki, M.; Homma, Y.; Sato, T.; Iwatsuki, M.; Miki, K.; Tokumoto, H. High-temperature scanning-tunneling-microscopy observation of phase transitions and reconstruction on a vicinal Si(111) surface. Phys. Rev. B 1993, 47, 13027-13030.
22. Hibino, H.; Ogino, T. Transient step bunching on a vicinal Si(111) surface. Phys. Rev. Lett. 1994, 72, 657-660.
23. Ogino, T.; Hibino, H.; Homma, Y. Step arrangement design and nanostructure self-organization on Si surfaces. Appl. Surf. Sci. 1997, 117/118, 642-651.
24. Ogino, T.; Hibino, H.; Homma, Y. Step arrangement design and nanostructure self-organization on Si(111) surfaces by patterning-assisted control. Appl. Surf. Sci. 1996, 107, 1-5.
25. Hibino, H.; Ogino, T. Reducing domain boundaries of surface reconstruction during molecular beam epitaxy on Si(111). Appl. Phys. Lett. 1995, 67, 915-917.
26. Omi, H.; Ogino, T. Submitted for publication in J. Vac. Sci. Technol.
27. Tanaka, S.; Umbach, C. C.; Blakely, J. M.; Tromp, R. M.; Mankos, M. Atomic step distributions on annealed periodic Si(001) gratings. J. Vac. Sci. Technol., A 1997, 15, 1345-1350.
28. Copel, M.; Reuter, M. C.; Kaxiras, E.; Tromp, R. M. Surfactants in Epitaxial Growth. Phys. Rev. Lett. 1989, 63, 632-635.
29. Eaglesham, D. J.; Cerullo, M. Dislocation-Free Stranski-Krastanow Growth of Ge on Si(100). Phys. Rev. Lett. 1990, 64, 1943-1946.
30. Mo, Y.-W.; Savage, D. E.; Swartzentruber, B. S.; Lagally, M. G. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Phys. Rev. Lett. 1990, 65, 1020-1023.
31. Ross, F. M.; Tersoff, J.; Tromp, R. M. Coarsening of Self-Assembled Ge Quantum Dots on Si(001) Phys. Rev. Lett. 1998, 80, 984-987.
32. Kamins, T. I.; Carr, E. C.; Williams, R. S.; Rosner, S. J. Deposition of three-dimensional Ge islands on Si(001) by chemical vapor deposition at atmospheric and reduced pressures. J. Appl. Phys. 1997, 81, 211-219.
33. Daruka, I.; Barabási, A.-L. Dislocation-free island formation in heteroepitaxial growth: A study at equilibrium. Phys. Rev. Lett. 1997, 79, 3708-3711.
34. Hibino, H.; Shimizu, N.; Shinoda, Y. Mesh pattern of Ge islands grown using solid-phase epitaxy. J. Vac. Sci. Technol., A 1993, 11, 2458-2462.
35. Hibino, H.; Shimizu, N.; Shinoda, Y.; Ogino, T. Periodic arrangement of Ge islands on Si(111). Mater. Res. Soc. Symp. Proc. 1994, 317, 41-46.
36. Omi, H.; Ogino, T. Self-assembled Ge nanowires grown on Si(113). Appl. Phys. Lett. 1997, 71, 2163-2165.
37. Kamins, T. I.; Williams, R. S. Lithographic positioning of self-assembled Ge islands on Si(001). Appl. Phys. Lett. 1997, 71, 1201-1203.
38. Teichert, C.; Lagally, M. G.; Peticolas, L. J.; Bean, J. C.; Tersoff, J. Stress-induced self-organization of nanoscale structures in SiGe/Si multilayer films. Phys. Rev. B 1996, 53, 16334-16337.
39. Tersoff, J.; Teichert, C.; Lagally, M. G. Self-organization in growth of quantum dot superlattices. Phys. Rev. Lett. 1996, 76, 1675-1678.
40. Omi, H.; Ogino, T. Self-organization of nanoscale Ge islands Si/Ge/Si(113) multilayers. Appl. Surf. Sci. 1998, 130-132, 781-785.
41. Patton, G. L.; Iyer, S. S.; Delage, S. L.; Ganin, E.; Mcintosh, R. C. Oxidation of strained Si-Ge layers grown by MBE. Mater. Res. Soc. Symp. Proc. 1998, 102, 295-299.
42. 2 transition. Appl. Phys. Lett. 1993, 62, 864-866.
43. 2. Appl. Phys. Lett. 1994, 64, 1839-1841.
44. Ogino, T.; Kobayashi, Y.; Prabhakaran, K.; Sumitomo, K. Fabrication of multi-level buried oxide layers by oxygen-ion-implantation into Si/Ge multilayers. Mater. Res. Soc. Symp. Proc. 1997,438, 211-216.
45. 2/Si(100). Appl. Phys. Lett. 1996, 68, 1241-1243.
46. Prabhakaran, K.; Sumitomo, K.; Ogino, T. Fabrication of buried epitaxial CoSi2 layer through selective diffusion. Appl. Phys. Lett. 1997, 70, 607-609.
47. Tougaw, P. D.; Lent, C. S.; Porod, W. Bistable saturation in coupled quantum-dot cells. J. Appl. Phys. 1993, 74, 3558-3566.
48. Wu, N.-J.; Asahi, N.; Amemiya, Y. Cellular-automaton circuits using single-electron-tunneling junctions. Jpn. J. Appl. Phys. 1997, 36, 2621-2627.