Pb deposition on n-Si(111):H electrodes: an in situ X-ray study

Surface Science

Volumn 452, Issue 1-3, 2000, Pages 150-160

  Ziegler, J C ^b   Scherb, G ^a   Bunk, O ^c   Kazimirov, A ^a   Cao, L X ^a   Kolb, D M ^b   Johnson, R L ^c   Zegenhagen, J ^a,d  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c UNIVERSITY OF HAMBURG   (Germany)

^d EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTROCHEMICAL ELECTRODES; ELECTROCHEMISTRY; EPITAXIAL GROWTH; INTERFACES (MATERIALS); LEAD; SINGLE CRYSTALS; SURFACES; X RAY DIFFRACTION ANALYSIS; X RAY SCATTERING;

SOLID LIQUID INTERFACES; VOLMER-WEBER GROWTH MODE;

SEMICONDUCTING SILICON;

EID: 0034188196     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00310-1     Document Type: Article

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