Al adatom migration from the H-terminated to the bare area on Si(111) surfaces

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 237-242

  Enomoto, N ^a   Hoshino, T ^a   Hata, M ^a   Tsuda, M ^a  

^a CHIBA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; QUANTUM THEORY; SINGLE CRYSTALS; SURFACE PHENOMENA;

ADATOMS; DENSITY FUNCTIONAL THEORY;

SEMICONDUCTING SILICON;

EID: 0032097020     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00057-9     Document Type: Article

References (18)

1. J.E. Northrup Phys. Rev. Lett. 53 1984 683
2. H. Tsuge M. Arai T. Fujiwara Jpn. J. Appl. Phys. 30 1991 L1583
3. R.I.G. Uhrberg G.V. Hansson J.M. Nicholls P.E.S. Persson Phys. Rev. B 31 1985 3805
4. T. Kinoshita S. Kono T. Sagawa Phys. Rev. B 32 1985 2714
5. H. Huang S.Y. Tong W.S. Yang H.D. Shih F. Jona Phys. Rev. B 42 1990 7483
6. R.J. Hamers Phys. Rev. B 40 1989 1657
7. R.J. Hamers J.E. Demuth J. Vac. Sci. Technol. A 6 1988 512
8. K. Takaoka M. Yoshimura T. Yao T. Sato T. Sueyoshi M. Iwatsuki Phys. Rev. B 48 1993 5657
9. M. Yoshimura K. Takaoka T. Yao Mater. Res. Soc. Symp. Proc. 317 1994 27
10. H.J. Wei M. Dähne-Prietsch A. Bauer M.T. Cuberes I. Manke G. Kaindl J. Vac. Sci. Technol. A 13 1995 2399
11. G.S. Higashi Y.J. Chabal G.W. Trucks K. Raghavachari Appl. Phys. Lett. 56 1990 656
12. G.S. Higashi R.S. Becker Y.J. Chabal A.J. Becker Appl. Phys. Lett. 58 1991 1656
13. J.W. Lyding T.C. Shen J.S. Hubacek J.R. Tucker G.C. Abeln Appl. Phys. Lett. 64 1994 2010
14. T. Hashizume S. Heike M.I. Lutwyche S. Watanabe K. Nakajima T. Nishi Y. Wada Jpn. J. Appl. Phys. 35 1996 L1085
15. T.C. Shen C. Wang J.R. Tucker Phys. Rev. Lett. 78 1997 1271
16. A.D. Becke Phys. Rev. A 38 1988 3098
17. A.D. Becke J. Chem. Phys. 98 1993 5648
18. C. Lee W. Yang R.G. Parr Phys. Rev. B 37 1988 785