Initial stage of the growth of Fe on Si(111)(1 × 1)-H

Applied Surface Science

Volumn 123-124, Issue , 1998, Pages 156-160

  Martin, M G ^a,b   Avila, J ^a,b   Gruyters, M ^b   Teodorescu, C ^a   Dumas, P ^b,c   Chabal, Y J ^d   Asensio, M C ^a,b  

^a CSIC   (Spain)

^b UNIVERSITÉ PARIS SACLAY   (France)

^c UNIVERSITÉ DES SCIENCES ET TECHNOLOGIES DE LILLE   (France)

^d LUCENT TECHNOLOGIES   (United States)

Author keywords

Infrared reflection absorption spectroscopy; Iron; Metal semiconductor interface; Photoelectron diffraction; Photoemission

Indexed keywords

DEPOSITION; ELECTRON DIFFRACTION; ELECTRON ENERGY LEVELS; FILM GROWTH; HYDROGEN BONDS; INFRARED SPECTROSCOPY; IRON; METALLIC FILMS; PHOTOEMISSION; SEMICONDUCTING SILICON COMPOUNDS; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE RESOLVED PHOTOEMISSION; ANGULAR SCANNED PHOTOELECTRON DIFFRACTION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0031681999     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)00485-6     Document Type: Article

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