Initial stage of room temperature reaction at Ni/Si(111)-H interfaces

Applied Surface Science

Volumn 162, Issue , 2000, Pages 25-29

  Hirose, K ^a   Hanta, A ^b   Uda, M ^b  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b WASEDA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; CRYSTAL ATOMIC STRUCTURE; DEPOSITION; EMISSION SPECTROSCOPY; HYDROGEN; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; MOLECULAR STRUCTURE; NICKEL; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILICON WAFERS; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOEMISSION SPECTROSCOPY;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0034246953     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00165-3     Document Type: Article

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