Continuous Wave Operation at Room Temperature of InGaN Laser Diodes Fabricated on 4H-SiC Substrates

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 5 PART 2, 1999, Pages 481-483

  Kuramata, Akito ^a   Kubota, Shin Ichi ^a   Soejima, Reiko ^a   Domen, Kay ^a   Horino, Kazuhiko ^a   Hacke, Peter ^a   Tanahashi, Toshiyuki ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

4H SiC; Continuous wave operation; GaN; InGaN; Laser diode

Indexed keywords

EID: 0001352284     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (7)

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