The effect of Si doping on the defect structure of GaN/AIN/Si(111)

Applied Physics Letters

Volumn 74, Issue 22, 1999, Pages 3362-3364

  Molina, S I ^a   Sanchez A M ^a   Pacheco, F J ^a   Garcia R ^a   Sanchez Garcia M A ^b   Sanchez F J ^b   Calleja, E ^b  

^a UNIVERSITY OF CÁDIZ   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); GRAIN SIZE AND SHAPE; MOLECULAR BEAM EPITAXY; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS; SUBSTRATES;

MOSAIC STRUCTURE; WURTZITE LAYERS;

SEMICONDUCTING FILMS;

EID: 0032615080     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123345     Document Type: Article

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