Electronic properties in p-type GaN studied by Raman scattering

Applied Physics Letters

Volumn 73, Issue 14, 1998, Pages 2000-2002

  Harima, H ^a   Inoue, T ^a   Nakashima, S ^a   Furukawa, K ^b   Taneya, M ^b  

^a OSAKA UNIVERSITY   (Japan)

^b SHARP CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000850532     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.122348     Document Type: Article

References (13)

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