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Volumn 40, Issue 5 B, 2001, Pages
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Material design of GaN-based ferromagnetic diluted magnetic semiconductors
a
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Author keywords
Ab initio calculation; Diluted magnetic semiconductor; Gallium nitride; Material design; Transition metal
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Indexed keywords
ELECTRONIC STRUCTURE;
ENERGY GAP;
FERROMAGNETIC MATERIALS;
FERROMAGNETISM;
GALLIUM NITRIDE;
GROUND STATE;
SEMICONDUCTOR DOPING;
MAGNETIC STATES;
MAGNETIC SEMICONDUCTORS;
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EID: 0035872518
PISSN: 00214922
EISSN: None
Source Type: Journal
DOI: 10.1143/jjap.40.l485 Document Type: Article |
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Times cited : (317)
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References (16)
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