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Journal of Applied Physics

Volumn 82, Issue 3, 1997, Pages 1305-1309

Interplay of electrons and phonons in heavily doped GaN epilayers

(6) Demangeot, F a Frandon, J a Renucci, M A a Meny, C b Briot, O c Aulombard, R L c

a CNRS (France)

b INSA (France)

c UNIVERSITÉ MONTPELLIER 2 (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000931450 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.365903 Document Type: Article

Times cited : (68)

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