Anion-related differences in phonons of (GaX)N(Ga1 - xAlxX)N(001) superlattices (X = As, N)

Journal of Raman Spectroscopy

Volumn 27, Issue 3-4, 1996, Pages 201-205

  Grille, H ^a   Bechstedt, F ^a  

^a Inst Festkorpertheorie Theor O   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; IONS;

CHEMICAL ENVIRONMENT; EFFECTIVE CHARGE; ELASTIC FORCE; EWALD SUMMATIONS; FORCE CONSTANTS; ION MODELING; LAYERED STRUCTURES; PHONON SPECTRUM; RANDOM-ELEMENT-ISODISPLACEMENT MODEL; THREE PARAMETERS;

PHONONS;

EID: 0001078516     PISSN: 03770486     EISSN: None     Source Type: Journal    
DOI: 10.1002/(sici)1097-4555(199603)27:3/4<201::aid-jrs950>3.0.co;2-m     Document Type: Article

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