Chapter 3 Vibrational Spectroscopy of Light Element Impurities in Semiconductors

Semiconductors and Semimetals

Volumn 51, Issue PART B, 1999, Pages 153-224

  Stavola, Michael ^a  

^a LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

IMPURITIES IN SEMI CONDUCTORS; LIGHT ELEMENTS;

CHEMICAL ELEMENTS;

EID: 77956730156     PISSN: 00808784     EISSN: None     Source Type: Book Series    
DOI: 10.1016/S0080-8784(08)62976-2     Document Type: Article

References (165)

1. Abernathy C.R. In: Ren F., Pearton S.J., Chu S.N.G., Shul R.J., Pletschen W., and Kamijo T. (Eds). State of the Art Program on Compound Semiconductors XXIV 96-2 (1996), Electrochem. Soc, Pennington, NJ 1
2. Akkerman Z.L., Borisova L.A., and Kravchenko A.F. Sov. Phys. Semicond. 10 (1976) 590
3. Alt H.Ch. Phys. Rev. Lett. 65 (1990) 3421
4. Alt H.Ch. Appl. Phys. Lett. 55 (1989) 2736
5. Alt, H. Ch. (1995). Defects in Semiconductors 18, M. Suezawa, ed., Trans Tech, Switzerland, p. 1577.
6. Artacho E., Lizon-Nordström A., and Ynduráin F. Phys. Rev. B 51 (1995) 7862
7. Balkanski M., and Nazarewicz W. J. Phys. Chem. Solids 27 (1966) 671
8. Barker A.S., and Sievers A.J. Rev. Mod. Phys. 47 (1975) S1
9. Bergman K., Stavola M., Pearton S.J., and Lopata J. Phys. Rev. B 38 (1988) 2770
10. Bergman K., Stavola M., Pearton S.J., and Hayes T. Phys. Rev. B 38 (1988) 9643
11. Bosomworth D.R., Hayes W., Spray A.R.L., and Watkins G.D. Proc. Roy. Soc. Lond. A 317 (1970) 133
12. Breuer S.J., Jones R., Briddon P.R., and Öberg S. Phys. Rev. B 53 (1996) 16289
13. Bridden P.R., Jones R., and Lister G.M.S. J. Phys. C 21 (1988) L1027
14. Bridden P.R., and Jones R. Phys. Rev. Lett. 64 (1990) 2535
15. Brozel M.R., Clegg J.B., and Newman R.C. J. Phys. D: Appl. Phys. 11 (1978) 1331
16. Budde M., Nielsen B.B., Jones R., Goss J., and Öberg S. Phys. Rev. B 54 (1996) 5485
17. Bullis W.M. In: Shimura F. (Ed). Oxygen in Silicon (1994), Academic Press, Boston 95
18. Cannelli G., Cantelli R., Capizzi M., Coluzza C., Cordero F., Frova A., and Lo Presti A. Phys. Rev. B 44 (1991) 11486
19. Cerdeira F., Fjeldly T.A., and Cardona M. Phys. Rev. B 9 (1974) 4344
20. Chandrasekhar M., Chandrasekhar H.R., Grimsditch M., and Cardona M. Phys. Rev. B 22 (1980) 4825
21. Chang K.J., and Chadi D.J. Phys. Rev. Lett. 62 (1989) 937
22. Chang K.J., and Chadi D.J. Phys. Rev. B 40 (1989) 11644
23. Chang K.J. Solid State Commun. 78 (1991) 273
24. Cheng Y.M., and Stavola M. Phys. Rev. Lett. 73 (1994) 3419
25. Chevallier J., Clerjaud B., and Pajot B. In: Pankove J.I., and Johnson N.M. (Eds). Hydrogen in Semiconductors (1991), Academic, Boston 447
26. Chevallier J. Defect and Diffusion Forum 131-132 (1996) 9
27. Clerjaud B., Côte D., and Naud C. Phys. Rev. Lett. 58 (1987) 1755
28. Clerjaud B., Gendron F., Krause M., and Ulrici W. Phys. Rev. Lett. 65 (1990) 1800
29. Clerjaud B., Côte D., Naud C., Gauneau M., and Chaplain R. Appl. Phys. Lett. 59 (1991) 2980
30. Corbett J.W., Watkins G.D., Chrenko R.M., and McDonald R.S. Phys. Rev. 121 (1961) 1015
31. Corbett J.W., McDonald R.S., and Watkins G.D. J. Phys. Chem. Solids 25 (1964) 873
32. Darwich R., Pajot B., Rose B., Robein D., Theys B., Rahbi R., Porte C., and Gendron F. Phys. Rev. B 48 (1993) 17776
33. Davidson B.R., Newman R.C., Bullough T.J., and Joyce T.B. Phys. Rev. B 48 (1993) 17106
34. Dawber P.G., and Elliott R.J. Proc. Phys. Soc. 81 (1963) 453
35. DeWames R.E., and Wolfram T. J. Chem. Phys. 40 (1964) 853 (1964)
36. Dexter D.L. In: Seitz F., and Turnbull D. (Eds). Solid State Physics (1958), Academic, New York 355
37. Elliot R.J., Hayes W., Jones G.D., Macdonald H.F., and Sennett C.T. Proc. Roy. Soc. London Ser. A 289 (1965) 1
38. Elliott R.J. In: Stevenson R.W.H. (Ed). Phonons in Perfect Lattices and in Lattices with Point Imperfections (1966), Plenum Press, New York 377
39. Estreicher S.K., Roberson M.A., and Marie D.M. Phys. Rev. B 50 (1994) 17018
40. Fano U. Phys. Rev. 124 (1961) 1866
41. Fermi E. Z. Phys. 71 (1931) 250
42. Fowler W.B., Capelletti R., and Colombi E. Phys. Rev. B 44 (1991) 2961
43. Fukai Y., and Sugimoto H. Adv. Phys. 34 (1985) 263
44. Gorelkinskii Y.V., and Nevinnyi N.N. In: Stutzmann M., and Chevallier J. (Eds). Hydrogen in Semiconductors: Bulk and Surface Properties (1991), North Holland, Amsterdam 155
45. Griffiths P.R., and de Haseth J.A. Fourier Transform Infrared Spectrometry. (1986), Wiley, New York
46. Grosche E.G., Ashwin M.J., Newman R.C., Robbie D.A., Sangster M.J.L., Pletl T., Pavone P., and Strauch D. Phys. Rev. B 51 (1995) 14758
47. Haas C. J. Phys. Chem. Solids 15 (1960) 108
48. Haller E.E. J. Appl. Phys. 77 (1995) 2857
49. Hayes W., and Spray A.R.L. J. Phys. C (Solid St. Phys.) 2 (1969) 1129
50. Heyman J.N., Ager J.W., Haller E.E., Johnson N.M., Walker J., and Doland C.M. Phys. Rev. B 45 (1992) 13363
51. Herzberg G. Molecular Spectra and Molecular Structure II, Infrared and Raman Spectra of Polyatomic Molecules. (1945), Van Nostrand, New York
52. Holbech J.D., Nielsen B.B., Jones R., Sitch P., and Öberg S. Phys. Rev. Lett. 71 (1993) 875
53. Holm B., Nielsen K.B., and Nielsen B.B. Phys. Rev. Lett. 66 (1991) 2360
54. Hourahine B., Jones R., Öberg S., and Briddon P.R. Mat. Sci. For. 258-263 (1997) 277
55. Hourahine B., Jones R., Öberg S., Newman R.C., Briddon P.R., and Roduner E. Phys. Rev. B 57 (1998) 12666
56. Hrostowski H.J., and Kaiser R.H. Phys. Rev. 107 (1957) 966
57. Hughes A.E., and Runciman W.A. Proc. Phys. Soc. London 90 (1967) 827
58. Johnson N.M., Herring C., and Chadi D.J. Phys. Rev. Lett. 56 (1986) 769
59. Johnson N.M., Ponce F.A., Street R.A., and Nemanich R.J. Phys. Rev. B 35 (1987) 4166
60. Jones R., and Öberg S. Phys. Rev. Lett. 69 (1992) 136
61. Jones R., Umerski A., and Öberg S. Phys. Rev. B 45 (1992) 11321
62. Jones R., Goss J., Ewels C., and Öberg S. Phys. Rev. B 50 (1994) 8378
63. Kaiser W., Keck P.H., and Lange C.F. Phys. Rev. 101 (1956) 1264
64. Kaplyanskii A.A. Opt. Spectrosc. (USSR) 16 (1964) 329
65. Kozuch D., Stavola M., Pearton S.J., Abernathy C.R., and Lopata J. Appl. Phys. Lett. 57 (1990) 2561
66. Kozuch D., Stavola M., Pearton S.J., Abernathy C.R., and Hobson W.S. J. Appl. Phys. 73 (1993) 3716
67. Krishnan K., and Hill S.L. In: Sakai H. (Ed). Fourier Transform Infrared Spectroscopy (1981), SPIE, Bellingham, WA 27
68. Laithwaite K., and Newman R.C. Phil. Mag. 35 (1977) 1689
69. Leigh R.S., and Szigeti B. Proc. Roy. Soc. A 301 (1967) 211
70. Leigh R.S., and Szigeti B. In: Wallis R.F. (Ed). Localized Excitations in Solids (1968), Plenum, New York 159
71. Leigh R.S., and Newman R.C. J. Phys. CSolid State Phys. 15 (1982) L1045
72. Leigh R.S., and Newman R.C. Semicond. Sci. Technol. 3 (1988) 84
73. Leigh R.S., Newman R.C., Sangster M.J.L., Davidson B.R., Ashwin M.J., and Robbie D.A. Semicond. Sci. Technol. 9 (1994) 1054
74. Leigh R.S., and Sangster M.J.L. Phys. Rev. B 54 (1996) 5562
75. Leitch A.W.R., Alex V., and Weber J. Solid State Commun. 1 (1998) 215 Fig. 05
76. Leitch A.W.R., Alex V., and Weber J. Phys. Rev. Lett. 81 (1998) 421
77. Levy M.E., and Spitzer W.G. J. Phys. C 6 (1973) 3223
78. Lorimor O.G., and Spitzer W.G. J. Appl. Phys. 37 (1966) 3687
79. Maguire J., Murray R., Newman R.C., Beall R.B., and Harris J.J. Appl. Phys. Lett. 50 (1987) 516
80. Manabe A., Mitsuishi A., Komiya H., and Ibuki S. Solid State Commun. 12 (1973) 337
81. Maradudin A.A., Montroll E.W., Weiss C.H., and Ipotova I.P. In: Ehrenreich H., Seitz F., and Turnbull D. (Eds). Solid State Physics. 2nd edition (1971), Academic, New York Supplement 3
82. Mayur A.J., Sciacca M.D., Udo M.K., Ramdas A.K., Itoh K., Wolk J., and Haller E.E. Phys. Rev. B 49 (1994) 16293
83. Mayur A.J., Sciacca M.D., Kim H., Miotkowski I., Ramdas A.K., and Rodriguez S. Phys. Rev. B 53 (1996) 12884 (1996)
84. McCluskey M.D., Haller E.E., Walukiewicz W., and Becla P. Phys. Rev. B 53 (1996) 16297
85. Mikkelsen J.C. Appl. Phys. Lett. 40 (1982) 336
86. Morse P.M. Phys. Rev. 34 (1929) 57
87. Moss T.S. Optical Properties of Semiconductors. (1959), Academic Press, New York
88. Murakami K., Fukata N., Sasaki S., Ishioka K., Kitajima M., Fujimura S., Kikuchi J., and Haneda H. Phys. Rev. Lett. 77 (1996) 3161
89. Murray R., and Newman R.C. In: Madelung O., and Schulz M. (Eds). Landolt-Börnstein 22b (1989), Springer-Verlag, Berlin 382-390 505-510, 576-583, 661, 669, 708, 713
90. Murray R., Newman R.C., Leigh R.S., Beall R.B., Harris J.J., Brozel M.R., Mohades-Kassai A., and Goulding M. Semicond. Sci. Technol. 4 (1989) 423
91. Murray R., Newman R.C., Sangster M.J.L., Beall R.B., Harris J.J., Wright P.J., Wagner J., and Ramsteiner M. J. Appl. Phys. 66 (1989) 2589
92. Newman R.C., Thompson F., Hyliands M., and Peart R.F. Sol. St. Commun. 10 (1972) 505
93. Newman R.C. Infrared Studies of Crystal Defects. (1973), Taylor and Francis, London
94. Newman R.C., Tucker J.H., and Livingston F.M. J. Phys. C: Solid St. Phys. 16 (1983) L151
95. Newman R.C. In: Stradling R.A., and Klipstein P.C. (Eds). Growth and Characterization of Semiconductors (1990), Adam Hilger, Bristol 119
96. Newman R.C. Semicond. Sci. Technol. 5 (1990) 911
97. Newman R.C. In: Stutzmann M., and Chevallier J. (Eds). Hydrogen in Semiconductors: Bulk and Surface Properties (1991), North Holland, Amsterdam 409
98. Newman R.C. In: Weber E. (Ed). Imperfections in III/VMaterials (1993), Academic Press, Boston 117
99. Newman R.C. In: Shimura F. (Ed). Oxygen in Silicon (1994), Academic Press, Boston 290
100. Newman R.C. Semicond. Sci. Technol 9 (1994) 1749
101. Pajot B., and Deltour J.P. Infrared Phys. 7 (1967) 195
102. Pajot B., Stein H.J., Cales B., and Naud C. J. Electrochem. Soc. 132 (1985) 3034
103. Pajot B., and Cales B. In: Mikkelson J.C., Pearton S.J., Corbett J.W., and Pennycook S.J. (Eds). Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon (1986), MRS, Pittsburgh 39
104. Pajot, B. and Clauws, P. (1987). Proceedings of the 18th International Conference on the Physics of Semiconductors, O. Engström, ed., World Scientific, Singapore, p. 911.
105. Pajot B., Newman R.C., Murray R., Jalil A., Chevallier J., and Azoulay R. Phys. Rev. B 37 (1988) 4188
106. Pajot B., Chari A., Aucoutuner M., Astier M., and Chantre A. Solid State Commun. 67 (1988) 855
107. Pajot B., Clerjaud B., and Chevallier J. In: Stutzmann M., and Chevallier J. (Eds). Hydrogen in Semiconductors: Bulk and Surface Properties (1991), North Holland, Amsterdam 371
108. Pajot B. In: Shimura F. (Ed). Oxygen in Silicon (1994), Academic Press, Boston 191
109. Pajot B., Artacho E., Ammerlaan C.A.J., and Spaeth J.-M. J. Phys. Condens. Matter 7 (1995) 7077
110. Pajot B. In: Jones R. (Ed). Early Stages of Oxygen Precipitation in Silicon (1996), Klewer, Dordrecht, The Netherlands 283
111. Pankove J.I., and Johnson N.M. Hydrogen in Semiconductors. (1991), Academic, Boston
112. Pavesi L., and Giannozzi P. Phys. Rev. B 43 (1991) 2446
113. Pavesi L., and Giannozzi P. Phys. Rev. B 46 (1992) 4621
114. Pearton S.J., Corbett J.W., and Stavola M. Hydrogen in Crystalline Semiconductors. (1992), Springer-Verlag, Berlin
115. Pearton S.J. Hydrogen in Compound Semiconductors. (1994), Trans. Tech, Aedermannsdorf, Switzerland
116. Prévot B., and Wagner J. Prog. Crystal Growth and Charact. 22 (1991) 245
117. Pritchard R.E., Ashwin M.J., Tucker J.H., Newman R.C., Lightowlers E.C., Binns M.J., McQuaid S.A., and Falster R. Phys. Rev. B 56 (1997) 13118
118. Pritchard R.E., Ashwin M.J., Tucker J.H., and Newman R.C. Phys. Rev. B 57 (1988) 15048
119. Ramsteiner M., Wagner J., Ennen H., and Maier M. Phys. Rev. B 38 (1988) 10669
120. Robbie D.A., Sangster M.J.L., and Pavone P. Phys. Rev. B 51 (1995) 10489
121. Robbie D.A., Sangster M.J.L., Grosche E.G., Newman R.C., Pletl T., Pavone P., and Strauch D. Phys. Rev. B 53 (1996) 9863
122. Schneider J., Dischler B., Seelewind H., Mooney P.M., Lagowski J., Matsui M., Beard D.R., and Newman R.C. Appl. Phys. Lett. 54 (1989) 1442
123. Sciacca M.D., Mayur A.J., Shin N., Miotkowski I., Ramdas A.K., and Rodriguez S. Phys. Rev. B 51 (1995) 6971
124. Sciacca M.D., Mayur A.J., Kim H., Miotkowski I., Ramdas A.K., and Rodriguez S. Phys. Rev. B 53 (1996) 12878
125. Shanabrook B.V., Moore W.J., Kennedy T.A., and Ruden P.P. Phys. Rev. B 30 (1984) 3563
126. Skowronski M., Neild S.T., and Kremer R.E. Appl. Phys. Lett. 57 (1990) 902
127. Skowronski M. In: Pantelides S.T. (Ed). Deep Centers in Semiconductors. 2nd edition (1992), Gordon and Breach, Yverdon, Switzerland 379
128. Smith S.D., and Angress J.F. Phys. Lett. 6 (1963) 131
129. Song C., Ge W., Jiang D., and Hsu C. Appl. Phys. Lett. 50 (1987) 1666
130. Southgate P.D. Proc. Phys. Soc. Lond. 76 (1960) 385
131. Spitzer W.G., Kahan A., and Bouthillette L. J. Appl. Phys. 40 (1969) 3398
132. Spitzer W.G. In: Madelung O. (Ed). Festkörperprohleme XI, Advances in Solid Stale Physics (1971), Pergamon, Vieweg 1
133. Stavola M., Patel I.R., Kimerling L.C., and Freeland P.E. Appl. Phys. Lett. 42 (1983) 73
134. Stavola M. Appl. Phys. Lett. 44 (1984) 514
135. Stavola M., Pearton S.J., Lopata J., and Dautremont-Smith W.C. Phys. Rev. B 37 (1988) 8313
136. Stavola M., Bergman K., Pearton S.J., and Lopata J. Phys. Rev. Lett. 61 (1988) 2786
137. Stavola M., and Pearton S.J. In: Pankove J.I., and Johnson N.M. (Eds). Hydrogen in Semiconductors (1991), Academic Press, New York 139
138. Stavola M. In: Pearton S.J. (Ed). Hydrogen in Compound Semiconductors (1994), Trans. Tech, Aedermannsdorf, Switzerland 251
139. Stavola M., and Cheng Y.M. Solid State Commun. 93 (1995) 431
140. Stein H.J. J. Electron. Mat. 4 (1975) 159
141. Stoneham A.M. Phys. Rev. Lett. 63 (1989) 1027
142. Theis W.M., Bajaj K.K., Litton C.W., and Sptizer W.G. Appl. Phys. Lett. 41 (1982) 70
143. Uftring S.J., Stavola M.J., Williams P.M., and Watkins G.D. Phys. Rev. B 51 (1995) 9612
144. Van de Walle C.G., Denteneer P.J.Ft., Bar-Yam Y., and Pantelides S.T. Phys. Rev. B 39 (1989) 10791
145. Van de Walle C.G. Phys. Rev. B 49 (1994) 4579
146. Van de Walle C.G. Phys. Rev. B 80 (1998) 2177
147. Veloarisoa I.A., Stavola M., Cheng Y.M., Uftring S., Watkins G.D., Pearton S.J., Abernathy C.R., and Lopata J. Phys. Rev. B 47 (1993) 16237
148. Vetterhöffer J., Wagner J., and Weber J. Phys. Rev. Lett. 77 (1996) 5409
149. Wagner J., and Ramsteiner M. IEEE J. Quantum Electron. QE-25 (1989) 993
150. Wagner J., Koidl P., and Newman R.C. Appl. Phys. Lett. 59 (1991) 1729
151. Wagner J., Maier M., Lauterbach T., Bachem K.H., Fischer A., Ploog K., Mörsch G., and Kamp M. Phys. Rev B 45 (1992) 9120
152. Wagner J., Bachem K.H., Newman R.C., Davidson B.R., Bullough T.J., and Joyce T.B. Phys. Rev. B 51 (1995) 4150
153. Wagner J., Newman R.C., Davidson B.R., Westwater S.P., Bullough T.J., Joyce T.B., Latham C.D., Jones R., and Öberg S. Phys. Rev. Lett. 78 (1997) 74
154. Walck S.N., and Fowler W.B. Phys. Rev. B 51 (1995) 13146
155. Watkins G.D., and Corbett J.W. Phys. Rev. 121 (1961) 1001
156. Watkins G.D. In: Grosse P. (Ed). Festkörperprohleme XXIV (Advances in Solid State Physics) (1984), Vieweg, Braunschweig 163
157. Watkins G.D., Fowler W.B., Stavola M., DeLeo G.G., and Kozuch D.M. Phys. Rev. Lett. 64 (1990) 467
158. Wilson E.B., Decius J.C., and Cross P.C. Molecular Vibrations. (1955), McGraw-Hill, New York
159. Woll A.R., and Fowler W.B. Phys. Rev. B 48 (1993) 16788
160. Woodhouse K., Newman R.C., Nicklin R., Bradley R.R., and Sangster M.J.L. J. Cryst. Growth 120 (1992) 323
161. Yamada-Kaneta H., Kaneta C., and Ogawa T. Phys. Rev. B 42 (1990) 9650
162. Zheng J.-F., and Stavola M. Phys. Rev. Lett. 76 (1996) 1154
163. Zheng J.-F. Vibrational Spectroscopy and Molecular Models for Defects in Semiconductors. (1996), Lehigh University, Bethlehem, Pennsylvania Ph.D. Dissertation
164. Zhong X., Jiang D., Ge W., and Song C. Appl. Phys. Lett. 52 (1988) 628
165. Zhong X. Phys. Rev. B 44 (1991) 13435