Resonant Raman scattering in GaN/(AIGa)N single quantum wells

Applied Physics Letters

Volumn 70, Issue 3, 1997, Pages 363-365

  Behr, D ^a   Niebuhr, R ^a   Wagner, J ^a   Bachem, K H ^a   Kaufmann, U ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001016926     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118413     Document Type: Article

References (18)

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3. S. Nakamura, M. Senoh, N. Iwasa, and S. Nagahama, Appl. Phys. Lett. 67, 1868 (1995); Jpn. J. Appl. Phys. 34, L797 (1995).
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11. See, e.g., Light Scattering in Solids V, edited by M. Cardona and G. Güntherodt (Springer, Berlin, 1989).
12. 1(LO) phonons as tentatively assigned in that reference.
13. R. Niebuhr, K.-H. Bachem, C. Merz, S. Santic, U. Kaufmann, D. Behr, J. Wagner, W. Rothemund, and Y. Lu (unpublished).
14. 0.85N conduction band offset of 0.351 eV calculated from AIN band gap energy of 6.28 eV [Physics of Group IV Elements and III-V Compounds, of Landolt Börnstein, edited by O. Madelung (Springer, Heidelberg, 1982), Vol. 17a] and a valence band offset between GaN and AlN of 0.5 eV J. Bauer et al., Appl. Phys. Lett. 65, 2211 (1994)]. Low temperature photoluminescence measurements on the present QW samples showed a QW-related emission which shifts to higher energies when the well width is reduced from 4 to 2 nm. The absolute emission energy for the 4 nm QW, however, is well below the band edge emission energy of bulklike GaN, which indicates a defect related QW emission.
15. 0.85N conduction band offset of 0.351 eV calculated from AIN band gap energy of 6.28 eV [Physics of Group IV Elements and III-V Compounds, of Landolt Börnstein, edited by O. Madelung (Springer, Heidelberg, 1982), Vol. 17a] and a valence band offset between GaN and AlN of 0.5 eV J. Bauer et al., Appl. Phys. Lett. 65, 2211 (1994)]. Low temperature photoluminescence measurements on the present QW samples showed a QW-related emission which shifts to higher energies when the well width is reduced from 4 to 2 nm. The absolute emission energy for the 4 nm QW, however, is well below the band edge emission energy of bulklike GaN, which indicates a defect related QW emission.
16. 0.85N conduction band offset of 0.351 eV calculated from AIN band gap energy of 6.28 eV [Physics of Group IV Elements and III-V Compounds, of Landolt Börnstein, edited by O. Madelung (Springer, Heidelberg, 1982), Vol. 17a] and a valence band offset between GaN and AlN of 0.5 eV J. Bauer et al., Appl. Phys. Lett. 65, 2211 (1994)]. Low temperature photoluminescence measurements on the present QW samples showed a QW-related emission which shifts to higher energies when the well width is reduced from 4 to 2 nm. The absolute emission energy for the 4 nm QW, however, is well below the band edge emission energy of bulklike GaN, which indicates a defect related QW emission.
17. H. Grille and F. Bechstedt, Superlattices Microstruct. 16, 29 (1994); J. Raman Spectrosc. 27, 201 (1996).
18. H. Grille and F. Bechstedt, Superlattices Microstruct. 16, 29 (1994); J. Raman Spectrosc. 27, 201 (1996).