Raman scattering from defects in GaN: The question of vibrational or electronic scattering mechanism

Physical Review B - Condensed Matter and Materials Physics

Volumn 58, Issue 20, 1998, Pages 13619-13626

  Siegle, H ^a   Kaschner, A ^a   Hoffmann, A ^a   Broser, I ^a   Thomsen, C ^a   Einfeldt, S ^b   Hommel, D ^b  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^b UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001163208     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.58.13619     Document Type: Article

References (38)

1. M. Ramsteiner, J. Menninger, O. Brandt, H. Yang, and K. H. Ploog, Appl. Phys. Lett. 69, 1276 (1996).
2. H. Siegle, I. Loa, P. Thurian, L. Eckey, A. Hoffmann, I. Broser, and C. Thomsen, Appl. Phys. Lett. 70, 909 (1997).
3. H. K. Mao, J. Xu, and P. M. Bell, J. Geophys. Res. 91, 4673 (1986).
4. H. Siegle, G. Kaczmarczyk, L. Filippidis, A. P. Litvinchuk, A. Hoffmann, and C. Thomsen, Phys. Rev. B 55, 7000 (1997).
5. T. Sekine, K. Uchinokura, and E. Matsuura, J. Phys. Chem. Solids 38, 1091 (1977).
6. W. Hayes and R. Loudon, in Scattering of Light by Crystals (Wiley, New York, 1978).
7. A. S. Barker, Jr. and A. J. Sievers, Rev. Mod. Phys. 47, Suppl. 2, S1 (1975).
8. D. D. Manchon, Jr. and P. J. Dean, in Proceedings of the 10th International Conference on the Physics of Semiconductors, edited by S. P. S. Keller, J. C. Hensel, and F. Stern (USAEC Division of Technical Information Extension, Oak Ridge, Tennessee, 1970), p. 760.
9. S. Nakashima, T. Hattori, P. E. Simmonds, and E. Amzallag, Phys. Rev. B 19, 3045 (1979).
10. D. J. Olego, J. Petruzzello, T. Marshall, and D. Cammack, J. Cryst. Growth 117, 324 (1992).
11. M. Holtz, R. Zallen, and O. Brafman, Phys. Rev. B 37, 2737 (1988).
12. Phys. Rev. BM. HoltzR. ZallenO. Brafman38, 6087 (1988).
13. K. Jain, Phys. Rev. B 13, 5448 (1976).
14. J. M. Cherlow, R. L. Aggarwal, and B. Lax, Phys. Rev. B 7, 4547 (1973).
15. J. F. Scott, F. Habball, J. H. Nicola, D. J. Toms, and S. Nakashima, Phys. Rev. B 19, 3053 (1979).
16. See, e.g., T. Strach, T. Ruf, M. Cardona, S. Jandl, V. Nekvasil, C. Chen, B. M. Wanklyn, D. I. Zhigunov, S. N. Barilo, and S. V. Shiryaev, Phys. Rev. B 56, 5578 (1997).
17. E. R. Glaser, T. A. Kennedy, H. C. Crookham, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, and J. N. Kuznia, Appl. Phys. Lett. 63, 2673 (1993).
18. K. Maier, M. Kunzer, U. Kaufmann, J. Schneider, B. Monemar, I. Akasaki, and H. Amano, Mater. Sci. Forum 87, 143 (1994).
19. W. E. Carlos, J. A. Freitas, Jr., M. Asif Khan, D. T. Olson, and J. N. Kuznia, Phys. Rev. B 48, 17 878 (1993).
20. D. Volm, T. Streibl, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki, Solid State Commun. 96, 53 (1995).
21. D. M. Larsen, J. Phys. Chem. Solids 29, 271 (1968).
22. This requirement is fulfilled for GaN. The band gap of cubic GaN is at low temperatures 3.3 eV while the spin-orbit splitting is in the range of 17 meV. See G. Ramirez-Flores, H. Navorro-Contreras, A. Lastras-Martinez, R. C. Powell, and J. E. Greene, Phys. Rev. B 50, 8433 (1994).
23. P. Y. Yu and M. Cardona, in Fundamentals of Semiconductors (Springer, Berlin, 1997), p. 64.
24. M. Drechsler, D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys., Part 2 34, L1178 (1995).
25. W. Shan, T. J. Schmidt, R. J. Hauenstein, J. J. Song, and B. Goldenberg, Appl. Phys. Lett. 66, 3492 (1995).
26. T. Suski, P. Perlin, H. Teisseyre, M. Leszynsky, I. Grzegory, J. Jun, M. Bockowski, S. Porowski, and T. D. Moustakas, Appl. Phys. Lett. 67, 2188 (1995).
27. See, e.g., P. Y. Yu and M. Cardona, in Fundamentals of Semiconductors (Springer, Berlin, 1996).
28. K. Karch, F. Bechstedt, and T. Pletl, Phys. Rev. B 56, 3560 (1997).
29. See, e.g., B. K. Meyer, A. Hoffmann, and P. Thurian, in Group-III Nitride Semiconductor Compounds, edited by B. Gil (Clarendon, Oxford, 1998), p. 242.
30. H. Siegle, A. Kaschner, A. Hoffmann, I. Broser, C. Thomsen, S. Einfeldt, D. Hommel, D. J. As, B. Schöttker, and D. Schikora (unpublished).
31. W. Limmer, W. Ritter, R. Sauer, B. Mensching, C. Liu, and B. Rauschenbach, Appl. Phys. Lett. 72, 2589 (1998).
32. H. J. Beister, K. Strössner, and K. Syassen, Phys. Rev. B 41, 5535 (1990).
33. R. N. Zitter, in The Physics of Semimetals and Narrow Gap Semiconductors, edited by D. L. Carter and R. T. Bate (Pergamon, Oxford, 1971), p. 285.
34. W. Richter, T. Fjeldly, J. Renucci, and M. Cardona, in Proceeding of the International Conference on Lattice Dynamics, Paris, France, edited by M. Balkanski (Flammarion, Paris, 1978), p. 104.
35. B. A. Weinstein and R. Zallen, in Light Scattering in Solids IV, edited by M. Cardona, Topics in Applied Physics Vol. 54 (Springer, Berlin, Heidelberg, 1984), p. 463.
36. T. Sauncy, M. Holtz, and R. Zallen, Phys. Rev. B 50, 10 702 (1994).
37. R. S. Berg, P. Y. Yu, and E. R. Weber, Appl. Phys. Lett. 47, 515 (1985).
38. T. Mattila and A. Zunger, Phys. Rev. B 58, 1367 (1998).