Raman determination of phonon deformation potentials in α-GaN

Solid State Communications

Volumn 100, Issue 4, 1996, Pages 207-210

  Demangeot, F ^a   Frandon, J ^a   Renucci, M A ^a   Briot, O ^b   Gil, B ^b   Aulombard, R L ^b  

^a UNIVERSITÉ DE TOULOUSE   (France)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFORMATION; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; PRESSURE EFFECTS; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR GROWTH; STRESS ANALYSIS; STRESSES; SUBSTRATES;

BIAXIAL STRESS; DEFORMATION POTENTIALS; PHONON FREQUENCIES; PHONON MODES; RESIDUAL STRAIN FIELDS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030270485     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1098(96)00410-3     Document Type: Article

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