Effects of inelastic scattering on direct tunneling gate leakage current in deep submicron metal-oxide-semiconductor transistors

Journal of Applied Physics

Volumn 92, Issue 2, 2002, Pages 937-943

  Alam, K ^a   Zaman, S ^a   Chowdhury, M M ^a   Khan, M R ^a   Haque, A ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP SUB-MICRON; DIRECT TUNNELING; DIRECT TUNNELING CURRENTS; EIGENENERGIES; GATE BIAS DEPENDENCE; GATE CURRENT; GATE OXIDE; GATE VOLTAGES; GATE-LEAKAGE CURRENT; INELASTIC SCATTERING RATE; MEASURED DATA; METAL OXIDE SEMICONDUCTOR STRUCTURES; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; NON-HERMITIAN MATRIX; OPEN BOUNDARY CONDITION; OXIDE THICKNESS; SELF-CONSISTENT CALCULATION; ULTRA THIN GATE OXIDE; WAVE FUNCTION PENETRATION;

DIELECTRIC DEVICES; GATE DIELECTRICS; GATES (TRANSISTOR); INELASTIC SCATTERING; LEAKAGE CURRENTS;

MOS DEVICES;

EID: 0037100834     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1486022     Document Type: Article

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