Semiclassical and wave-mechanical modeling of charge control and direct tunneling leakage in MOS and H-MOS devices with ultrathin oxides

IEEE Transactions on Electron Devices

Volumn 48, Issue 4, 2001, Pages 715-721

  Cassan, E ^a   Dollfus, P ^a   Galdin, S ^a   Hesto, P ^a  

^a UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

MOSFETs; Semiconductor device modeling; Semiconductor heterojunctions; Tunneling effect; Ultrathin oxides

Indexed keywords

ELECTRIC CHARGE; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); HETEROJUNCTIONS; LEAKAGE CURRENTS; OXIDES; THRESHOLD VOLTAGE; ULTRATHIN FILMS; WAVE EQUATIONS;

CHARGE DISTRIBUTION; DIRECT TUNNELING LEAKAGE;

MOS DEVICES;

EID: 0035309581     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.915702     Document Type: Article

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