Effect of oxide tunneling on the measurement of MOS interface states

IEEE Electron Device Letters

Volumn 21, Issue 8, 2000, Pages 405-407

  Giannini, M ^a   Pacelli, A ^b   Lacaita, A L ^c   Perron, L M ^a  

^a STMICROELECTRONICS   (Italy)

^b STONY BROOK UNIVERSITY   (United States)

^c POLITECNICO DI MILANO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; ELECTRIC CHARGE; MATHEMATICAL MODELS; OXIDES;

CAPACITANCE-VOLTAGE (C-V) TECHNIQUES; CHARGE PUMPING TECHNIQUES;

MOS DEVICES;

EID: 0034245937     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.852965     Document Type: Article

References (7)

1. J. Koomen, "Investigation of the MOST channel conductance in weak inversion," Solid-State Electron., vol. 16, pp. 801-810, 1973.
2. G. Groeseneken, H. E. Maes, N. Beltrán, and R. F. De Keersmaecker, "A reliable approach to charge-pumping measurements in MOS transistors," IEEE Trans. Electron Devices, vol. ED-31, pp. 42-53, 1984.
3. A. Pacelli, "Self-consistent solution of the Schrödinger equation in semiconductor devices by implicit iteration," IEEE Trans. Electron Devices, vol. 44, pp. 1169-1171, 1997.
4. A. Pacelli, A. L. Lacaita, S. Villa, and L. Perron, "Reliable extraction of MOS interface traps from low-frequency CV measurements," IEEE Electron Device Lett., vol. 19, pp. 148-150, 1998.
5. Y. Maneglia and D. Bauza, "Extraction of slow oxide trap concentration profiles in metal-oxide-semiconductor transistors using the charge pumping method," J. Appl. Phys., vol. 79, p. 4187, 1996.
6. F. P. Heiman and G. Warfield, "The effects of oxide traps on the MOS capacitance," IEEE Trans. Electron Devices, vol. ED-12, pp. 167-178, 1965.
7. 2 interface traps in MOS transistors using the charge pumping technique," IEEE Trans. Electron Devices, vol. 44, p. 2262, 1997.