A study into the broadening of the quantized inversion layer states in deep submicron MOSFETs

Solid-State Electronics

Volumn 45, Issue 5, 2001, Pages 755-760

  Rahman, A ^a   Haque, A ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

Density of states; MOSFET modeling; Quantum effects; Quasi bound states; Ultra thin gate oxide

Indexed keywords

EIGENVALUES AND EIGENFUNCTIONS; ELECTRONIC DENSITY OF STATES; GATES (TRANSISTOR); QUANTUM ELECTRONICS;

QUASI-BOUND STATES;

MOSFET DEVICES;

EID: 0035335359     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(01)00095-8     Document Type: Article

References (14)