Influence of defects on elastic gate tunneling currents through ultrathin SiO2 gate oxides: predictions from microscopic models

Superlattices and Microstructures

Volumn 28, Issue 5-6, 2000, Pages 517-524

  Stadele M ^a   Fischer, B ^a   Tuttle, B R ^a   Hess, K ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GATES (TRANSISTOR); MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTOR JUNCTIONS; SILICA;

ELASTIC TUNNELING; GATE CURRENT; MICROSCOPIC MODELS; TIGHT BINDING; ULTRATHIN SILICA GATE OXIDES;

MOSFET DEVICES;

EID: 0343844422     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.2000.0956     Document Type: Article

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