Nonuniform Distribution of Trapped Charges in Electron Injection Stressed SiO2 Films

Journal of the Electrochemical Society

Volumn 148, Issue 2, 2001, Pages

  Yamabe, Kikuo ^a   Liao, Kai ^a   Minemura, Hiroaki ^a   Murata, Masahide ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0345775619     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1339871     Document Type: Article

References (16)

1. 2 and Its Interface, S. T, Pantelides, Editor, Pergumon, New York (1978).
2. T. H. Ning, J. Appl. phys., 47, 3203 (1976).
3. P. Solomon, J. Appl. Phys., 48, 3843 (1977).
4. I. C. Chen, S. E. Holland, and C. Hu, IEEE J. Solid-State Circuits, SC-20, 333 (1983).
5. Y. Nissan-Cohen, J. Shappier, and D. Frohman-Bentchkowsky, J. Appl. Phys., 58, 2252 (1985).
6. H. Fukuda, A. Uchiyama, T. Kuramochi, T. Hayashi, T. Iwabuchi, T. Ono, and T. Takayashiki, Tech. Dig. Int. Electron Device Meet., 465 (1992).
7. D. L, Crook, in Proceedings 1978 International Reliability physics Symposium IEEE. p. 1 (1978).
8. E. S. Anolick and G. R. Nelson, in Proc. 1978 Int. Reliability Phys. Symp., IEEE, p. 8 (1978).
9. Y, Ozawa and K. Yamabe, Extended Abstracts of the 1991 International Conference on Solid State Devices and Materials, Japan Society of Applied Physics. p. 240 (1991).
10. K. Yamabe, K. Taniguchi, and Y. Matsushita, in Proceedings of the 1983 International Reliability Physics Symposium, IEEE. p. 184 (1983).
11. C. M. Osbum and D. W. Omond, J. Electrochem. Soc., 119, 596 (1972).
12. Y. Hokari, IEEE Trans, Electron Devices, ED-35, 1299 (1988).
13. K. Yamabe, K. Liao,and M. Murata, Jpn. J. Appl. Phys., Part 2, 38, L1453 (1999)
14. H. Hazama and K. Yamabe, In preparation.
15. E. H. Nicollian, C. N. Berglund, P. F. Schmidt, and J. M. Andrews, J. Appl. phys., 42, 5654 (1971).
16. K. Yamabe, K. Liao, and M. Murata. In preparation.