On the use of appropriate boundary conditions to calculate the normalized wave functions in the inversion layers of MOSFETs with ultra-thin gate oxides

Solid-State Electronics

Volumn 44, Issue 10, 2000, Pages 1833-1836

  Haque, A ^a   Rahman, A ^a   Chowdhury, I B ^a  

^a BANGLADESH UNIVERSITY OF ENGINEERING AND TECHNOLOGY   (Bangladesh)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMPTOTIC STABILITY; BAND STRUCTURE; BOUNDARY CONDITIONS; CARRIER CONCENTRATION; COMPUTATIONAL METHODS; EIGENVALUES AND EIGENFUNCTIONS; GREEN'S FUNCTION; INTERFACES (MATERIALS); POLES AND ZEROS; QUANTUM EFFICIENCY; ULTRATHIN FILMS;

EFFECTIVE-MASS APPROXIMATION; SCHRODINGER EQUATIONS;

MOSFET DEVICES;

EID: 0034291101     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00115-5     Document Type: Article

References (9)

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