Gate current in ultrathin MOS capacitors: A new model of tunnel current

IEEE Transactions on Electron Devices

Volumn 48, Issue 2, 2001, Pages 271-278

  Larcher, L ^a  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRON TUNNELING; OSCILLATIONS; SURFACE TENSION; ULTRATHIN FILMS;

GATE CURRENTS; TUNNEL CURRENTS;

MOS CAPACITORS;

EID: 0035248881     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.902726     Document Type: Article

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