Post soft breakdown conduction in SiO2 gate oxides

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2000, Pages 533-536

  Sune J ^a   Miranda, E ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRONS; POINT CONTACTS; ULTRATHIN FILMS;

GATE OXIDES; POST SOFTDOWN BREAKDOWN (SBD);

SILICA;

EID: 0034454562     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)