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Physical Review Letters

Volumn 79, Issue 1, 1997, Pages 111-114

Thermally assisted tunneling of the B-H complex in silicon

(3) Noya, José C a Herrero, Carlos P a Ramírez, Rafael a

a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BORON COMPOUNDS; CALCULATIONS; COMPUTER SIMULATION; DEUTERIUM; ELECTRON TUNNELING; HYDROGEN; MONTE CARLO METHODS; PROBABILITY; QUANTUM THEORY; REACTION KINETICS;

JUMP RATE CONSTANTS; PATH INTEGRAL MONTE CARLO SIMULATIONS; THERMALLY ASSISTED TUNNELING;

SEMICONDUCTING SILICON;

EID: 0003096995 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.79.111 Document Type: Article

Times cited : (22)

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