Are soft breakdown and hard breakdown of ultrathin gate oxides actually different failure mechanisms?

IEEE Electron Device Letters

Volumn 21, Issue 4, 2000, Pages 167-169

  Suñé, Jordi ^a   Mura, Giovanna ^c   Miranda, Enrique ^b  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b UNIVERSIDAD DE BUENOS AIRES   (Argentina)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC PROPERTIES OF SOLIDS; ELECTRIC BREAKDOWN OF SOLIDS; RELIABILITY; SEMICONDUCTING FILMS; SILICA; STATISTICAL TESTS; VLSI CIRCUITS;

FAILURE MECHANISMS; FUNNELING EFFECTS; HARD BREAKDOWN; RELIABILITY TESTING; SOFT BREAKDOWN; ULTRATHIN GATE OXIDES;

MOS CAPACITORS;

EID: 0343191465     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.830970     Document Type: Article

References (26)

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